On the melting of boron chalcogenides B6S and B6Se under pressure
Résumé
Melting of new of boron-rich chalcogenides, orthorhombic B6S and B6Se, has been studied at pressures up to 8 GPa using in situ electrical resistivity measurements. It was found that above 2.5 GPa both chalcogenides melt congruently, and the melting curves have a negative slope (-61(5) K/GPa for B6S and -80(2) K/GPa for B6Se), indicating a higher density of the melts compared to the solid phases. The melting points at ambient pressure were estimated to be 2190(30) K for B6S and 2347(12) K for B6Se.
Domaines
MatériauxOrigine | Fichiers produits par l'(les) auteur(s) |
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