J. M. Rabaey, A. Chandrakasan, and B. Nikolic, Digital integrated circuits:a design perspective, 2012.

Y. Choi, K. Tsu-jae, and H. Chenming, Nanoscale CMOS spacer FinFET for the terabit era, IEEE Electron Device Letters, vol.23, issue.1, pp.25-27, 2002.
DOI : 10.1109/55.974801

S. Barbara and . Moore, A golden rule of microchips appears to be coming to an end, < http://www.economist.com/news/21589080- golden-rule-microchips-appears-be-coming-end-no-moore> (2013)(Date of access, p.17, 2014.

M. C. Lemme, T. J. Echtermeyer, M. Baus, and H. Kurz, A Graphene Field-Effect Device, IEEE Electron Device Letters, vol.28, issue.4, pp.282-284, 2007.
DOI : 10.1109/LED.2007.891668

H. Liu, A. T. Neal, and P. D. Ye, MOSFETs, ACS Nano, vol.6, issue.10, pp.8563-8569, 2012.
DOI : 10.1021/nn303513c

URL : https://hal.archives-ouvertes.fr/hal-01068009

H. Liu, Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility, ACS Nano, vol.8, issue.4, pp.4033-4041, 2014.
DOI : 10.1021/nn501226z

S. E. Thompson and S. Parthasarathy, Moore's law: the future of Si microelectronics, Materials Today, vol.9, issue.6, pp.20-25, 2006.
DOI : 10.1016/S1369-7021(06)71539-5

K. A. Gable, L. S. Robertson, A. Jain, and K. S. Jones, The effect of preamorphization energy on ultrashallow junction formation following ultrahigh-temperature annealing of ion-implanted silicon, Journal of Applied Physics, vol.97, issue.4, p.44501, 2005.
DOI : 10.1063/1.1844619

J. C. Ho, Controlled nanoscale doping of semiconductors via molecular monolayers, Nature Materials, vol.32, issue.1, pp.62-67, 2008.
DOI : 10.1063/1.1894611

R. C. Longo, K. Cho, W. G. Schmidt, Y. J. Chabal, and P. Thissen, Monolayer Doping via Phosphonic Acid Grafting on Silicon: Microscopic Insight from Infrared Spectroscopy and Density Functional Theory Calculations, Advanced Functional Materials, vol.3, issue.27, pp.3471-3477, 2013.
DOI : 10.1002/adfm.201202808

J. C. Ho, Wafer-Scale, Sub-5 nm Junction Formation by Monolayer Doping and Conventional Spike Annealing, Nano Letters, vol.9, issue.2, pp.725-730, 2009.
DOI : 10.1021/nl8032526

T. Itoh and T. Abe, Diffusion coefficient of a pair of nitrogen atoms in float???zone silicon, Applied Physics Letters, vol.53, issue.1, pp.39-41, 1988.
DOI : 10.1063/1.100116

V. V. Voronkov and R. Falster, Multispecies nitrogen diffusion in silicon, Journal of Applied Physics, vol.100, issue.8, p.83511, 2006.
DOI : 10.1063/1.2359609

M. R. Linford and C. E. Chidsey, Alkyl monolayers covalently bonded to silicon surfaces, Journal of the American Chemical Society, vol.115, issue.26, pp.12631-12632, 1993.
DOI : 10.1021/ja00079a071

M. R. Linford, P. Fenter, P. M. Eisenberger, and C. E. Chidsey, Alkyl Monolayers on Silicon Prepared from 1-Alkenes and Hydrogen-Terminated Silicon, Journal of the American Chemical Society, vol.117, issue.11, pp.3145-3155, 1995.
DOI : 10.1021/ja00116a019

M. M. Sung, G. J. Kluth, O. W. Yauw, and R. Maboudian, Thermal Behavior of Alkyl Monolayers on Silicon Surfaces, Langmuir, vol.13, issue.23, pp.6164-6168, 1997.
DOI : 10.1021/la9705928

A. B. Sieval, Highly Stable Si???C Linked Functionalized Monolayers on the Silicon (100) Surface, Langmuir, vol.14, issue.7, pp.1759-1768, 1998.
DOI : 10.1021/la971139z

S. R. Puniredd, O. Assad, and H. Haick, Highly Stable Organic Monolayers for Reacting Silicon with Further Functionalities: The Effect of the C???C Bond nearest the Silicon Surface, Journal of the American Chemical Society, vol.130, issue.41, pp.13727-13734, 2008.
DOI : 10.1021/ja804674z

Z. Lin, DNA Attachment and Hybridization at the Silicon (100) Surface, Langmuir, vol.18, issue.3, pp.788-796, 2002.
DOI : 10.1021/la010892w

S. Ciampi, Functionalization of Acetylene-Terminated Monolayers on Si(100) Surfaces:?? A Click Chemistry Approach, Langmuir, vol.23, issue.18, pp.9320-9329, 2007.
DOI : 10.1021/la701035g

A. Lavi, H. Cohen, T. Bendikov, A. Vilan, and D. Cahen, Si???C-bound alkyl chains on oxide-free Si: towards versatile solution preparation of electronic transport quality monolayers, Phys. Chem. Chem. Phys., vol.112, issue.4, pp.1293-1296, 2011.
DOI : 10.1039/C0CP01445A

W. Peng, W. J. Debenedetti, S. Kim, M. A. Hines, and Y. J. Chabal, Lowering the density of electronic defects on organic-functionalized Si(100) surfaces, Applied Physics Letters, vol.104, issue.24, p.241601, 2014.
DOI : 10.1063/1.4883367

M. Uematsu, Simulation of boron, phosphorus, and arsenic diffusion in silicon based on an integrated diffusion model, and the anomalous phosphorus diffusion mechanism, Journal of Applied Physics, vol.82, issue.5, pp.2228-2246, 1997.
DOI : 10.1063/1.366030

H. Bracht, H. H. Silvestri, I. D. Sharp, and E. Haller, Self- and foreign-atom diffusion in semiconductor isotope heterostructures. II. Experimental results for silicon, Physical Review B, vol.75, issue.3, p.35211, 2007.
DOI : 10.1103/PhysRevB.75.035211

R. S. Hockett, Anomalous diffusion of nitrogen in nitrogen???implanted silicon, Applied Physics Letters, vol.54, issue.18, pp.1793-1795, 1989.
DOI : 10.1063/1.101266

P. A. Schultz and J. S. Nelson, Fast through-bond diffusion of nitrogen in silicon, Applied Physics Letters, vol.78, issue.6, pp.736-738, 2001.
DOI : 10.1063/1.1345828

P. V. Palvlov, E. I. Zorin, D. I. Tetelbaum, and A. Khokhlov, Nitrogen as dopant in silicon and germanium, Physica Status Solidi (a), vol.11, issue.1, pp.11-36, 1976.
DOI : 10.1002/pssa.2210350102

R. Chang and C. Lin, Deactivation of phosphorus in silicon due to implanted nitrogen, physica status solidi (c), vol.11, issue.1, pp.24-27, 2014.
DOI : 10.1002/pssc.201300131

D. I. Tetelbaum, E. I. Zorin, and N. Lisenkova, Anomalous solubility of implanted nitrogen in heavily boron-doped silicon, Semiconductors, vol.38, issue.7, pp.775-777, 2004.
DOI : 10.1134/1.1777598

S. T. Pantelides and C. Sah, Theory of localized states in semiconductors. I. New results using an old method, Physical Review B, vol.10, issue.2, pp.621-637, 1974.
DOI : 10.1103/PhysRevB.10.621

Y. Tokumaru, H. Okushi, T. Masui, and T. Abe, Deep Levels Associated with Nitrogen in Silicon, Japanese Journal of Applied Physics, vol.21, issue.Part 2, No. 7, p.443, 1982.
DOI : 10.1143/JJAP.21.L443

J. B. Mitchell, P. P. Pronko, J. Shewchun, D. A. Thompson, and J. A. Davies, Nitrogen???implanted silicon. I. Damage annealing and lattice location, Journal of Applied Physics, vol.46, issue.1, pp.332-334, 1975.
DOI : 10.1063/1.321339