Si/Ge intermixing during Ge Stranski–Krastanov growth - Aix-Marseille Université Access content directly
Journal Articles Beilstein Journal of Nanotechnology Year : 2014

Si/Ge intermixing during Ge Stranski–Krastanov growth


The Stranski–Krastanov growth of Ge islands on Si(001) has been widely studied. The morphology changes of Ge islands during growth, from nucleation to hut/island formation and growth, followed by hut-to-dome island transformation and dislocation nucle-ation of domes, have been well described, even at the atomic scale, using techniques such as scanning tunneling microscopy and transmission electron microscopy. Although it is known that these islands do not consist of pure Ge (due to Si/Ge intermixing), the composition of the Ge islands is not precisely known. In the present work, atom probe tomography was used to study the composition of buried dome islands at the atomic scale, in the three-dimensional space. The core of the island was shown to contain about 55 atom % Ge, while the Ge composition surrounding this core decreases rapidly in all directions in the islands to reach a Ge concentration of about 15 atom %. The Ge distribution in the islands follows a cylindrical symmetry and Ge segregation is observed only in the {113} facets of the islands. The Ge composition of the wetting layer is not homogeneous, varying from 5 to 30 atom %.
Fichier principal
Vignette du fichier
ptpmcrender.pdf (1.96 Mo) Télécharger le fichier
Origin : Publisher files allowed on an open archive

Dates and versions

hal-01239745 , version 1 (08-12-2015)



Alain Portavoce, Khalid Hoummada, Antoine Ronda, Dominique Mangelinck, Isabelle Berbezier. Si/Ge intermixing during Ge Stranski–Krastanov growth. Beilstein Journal of Nanotechnology, 2014, 5, pp.2374-2382. ⟨10.3762/bjnano.5.246⟩. ⟨hal-01239745⟩
159 View
105 Download



Gmail Facebook X LinkedIn More