Impact of Resistive Paths on NVM Array Reliability: Application to Flash & ReRAM Memories - Aix-Marseille Université
Conference Papers Year : 2016

Impact of Resistive Paths on NVM Array Reliability: Application to Flash & ReRAM Memories

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Micro and nanotechnologies/Microelectronics

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https://amu.hal.science/hal-01463140

Submitted on : Thursday, February 9, 2017-2:01:22 PM

Last modification on : Monday, June 10, 2024-4:58:03 PM

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hal-01463140 , version 1 (09-02-2017)

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  • HAL Id : hal-01463140 , version 1

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P. Canet, J. Postel-Pellerin, Hassen Aziza. Impact of Resistive Paths on NVM Array Reliability: Application to Flash & ReRAM Memories. 27th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2016), Sep 2016, Halle, Germany. ⟨hal-01463140⟩

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