Multi-Poisson Process Analysis of Real-Time Soft-Error Rate Measurements in Bulk 65nm SRAMs - Aix-Marseille Université Access content directly
Conference Papers Year : 2017

Multi-Poisson Process Analysis of Real-Time Soft-Error Rate Measurements in Bulk 65nm SRAMs

Abstract

Altitude and underground real-time soft error rate (SER) measurements on SRAM circuits have been analyzed in terms of independent multi-Poisson processes describing the occurrence of single events as a function of bit flip multiplicity. Applied for both neutron-induced and alpha particle-induced SERs, this detailed analysis highlights the respective contributions of atmospheric radiation and alpha contamination to multiple cell upset mechanisms. It also offers a simple way to predict by simulation the radiation response of a given technology for any terrestrial position, as illustrated here for bulk 65nm SRAMs.
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Dates and versions

hal-01787603 , version 1 (07-05-2018)

Identifiers

  • HAL Id : hal-01787603 , version 1

Cite

Soilihi Moindjie, Jean-Luc Autran, Daniela Munteanu, Gilles Gasiot, Philippe Roche. Multi-Poisson Process Analysis of Real-Time Soft-Error Rate Measurements in Bulk 65nm SRAMs. 28th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2017), Sep 2017, Bordeaux, France. ⟨hal-01787603⟩
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