The Junctionless Double-Gate MOSFET combined with a Dual-Material Gate (JL-DMDG) is interesting for future ultra-scaled devices thanks to a simplified technological process (no junctions), reduced leakage currents and capability to reduce SCEs and HCEs (due to the step in the potential profile). In this work, we investigate the bipolar amplification and charge collection in JL-DMDG submitted to heavy-ion irradiation. We show that JL-DMDG is more sensitive to radiation than more conventional devices with single-material-gate or operating in inversion-mode.