Simulation Model of a SiC Power MOSFET Variables Estimation and Control of a Power Source - Aix-Marseille Université Access content directly
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Simulation Model of a SiC Power MOSFET Variables Estimation and Control of a Power Source

Abstract

An electro-thermal model of a power SiC MOSFET is proposed. The thermal model, is coupled with the physical model through the interaction between the transistor power loss and the junction temperature. For validation of this model, the simulation curves are compared to the manufacturer's experimental curves. As first application, a boost DC/DC converter is considered. An observer is proposed to estimate the MOSFET voltage V DS , the power and the junction temperature. These estimates are used to control the converter. The proposed model and estimator give sufficiently good temperature and power estimation. The Power source obtained using DC/DC converter is efficient, allowing the power loss reduction and robust.
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Dates and versions

hal-01966868 , version 1 (30-12-2018)

Identifiers

Cite

E Baghaz, N. M'Sirdi, K Frifita, A Naamane, M Boussak. Simulation Model of a SiC Power MOSFET Variables Estimation and Control of a Power Source. ICINCO 2017- International Conference on Informatics in Control, Automation and Robotics, Jul 2017, madrid, Spain. ⟨10.5220/0006460806370643⟩. ⟨hal-01966868⟩
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