Nanometric-Size Effect upon Diffusion and Reaction in Semiconductors: Experimental and Theoretical Investigations - Aix-Marseille Université Access content directly
Journal Articles Defect and Diffusion Forum Year : 2012
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hal-02044905 , version 1 (21-02-2019)

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  • HAL Id : hal-02044905 , version 1

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Alain Portavoce, Christophe Girardeaux, Guy Treglia, Jean Bernardini, Dominique Mangelinck, et al.. Nanometric-Size Effect upon Diffusion and Reaction in Semiconductors: Experimental and Theoretical Investigations. Defect and Diffusion Forum, 2012, 323-325, pp.433-438. ⟨hal-02044905⟩
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