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Journal Articles Microelectronics Reliability Year : 2019

Terrestrial Neutron-Induced Single Events in GaN

Abstract

We study the physical mechanisms of single event production in GaN wide-bandgap semiconductor subjected to atmospheric high-energy (>1 MeV) neutron irradiation. The interactions of incident neutrons with the target material are investigated with Geant4 and the transport of the deposited charge simulated using our random-walk drift-diffusion (RWDD) modeling approach in a generic reversely biased bulk junction.
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Dates and versions

hal-02263526 , version 1 (10-11-2020)

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Daniela Munteanu, Jean-Luc Autran. Terrestrial Neutron-Induced Single Events in GaN. Microelectronics Reliability, 2019, 100-101, pp.113357. ⟨10.1016/j.microrel.2019.06.049⟩. ⟨hal-02263526⟩
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