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Conference Papers Year : 2019

Terrestrial Neutron-Induced Single Events in GaN


We study the physical mechanisms of single event production in GaN wide-bandgap semiconductor subjected to atmospheric high-energy (> 1 MeV) neutron irradiation. The interactions of incident neutrons with the target material are investigated with Geant4 and the transport of the deposited charge simulated using our random-walk drift-diffusion (RWDD) modelling approach in a generic reversely biased bulk junction.
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hal-02263529 , version 1 (10-11-2020)


  • HAL Id : hal-02263529 , version 1


Daniela Munteanu, Jean-Luc Autran. Terrestrial Neutron-Induced Single Events in GaN. 30th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2019), Sep 2019, Toulouse, France. ⟨hal-02263529⟩
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