Terrestrial Neutron-Induced Single Events in GaN - Aix-Marseille Université Access content directly
Conference Papers Year : 2019

Terrestrial Neutron-Induced Single Events in GaN

Abstract

We study the physical mechanisms of single event production in GaN wide-bandgap semiconductor subjected to atmospheric high-energy (> 1 MeV) neutron irradiation. The interactions of incident neutrons with the target material are investigated with Geant4 and the transport of the deposited charge simulated using our random-walk drift-diffusion (RWDD) modelling approach in a generic reversely biased bulk junction.
Fichier principal
Vignette du fichier
ESREF_2019_GaN_HAL.pdf (3.52 Mo) Télécharger le fichier
Origin : Files produced by the author(s)
Loading...

Dates and versions

hal-02263529 , version 1 (10-11-2020)

Identifiers

  • HAL Id : hal-02263529 , version 1

Cite

Daniela Munteanu, Jean-Luc Autran. Terrestrial Neutron-Induced Single Events in GaN. 30th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2019), Sep 2019, Toulouse, France. ⟨hal-02263529⟩
74 View
28 Download

Share

Gmail Facebook X LinkedIn More