Modeling and Simulation of SEU in Bulk Si and Ge SRAM
Résumé
In this work, the random-walk drift-diffusion (RWDD) model has been coupled to a circuit simulator to investigate single event upsets (SEU) induced by alpha particles in SRAM cells with silicon or germanium as bulk material. The impact of the semiconductor properties in terms of charge generation and transport on the SEU mechanisms is illustrated and discussed.
| Origine | Fichiers produits par l'(les) auteur(s) |
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