Journal Articles
Journal of Applied Physics
Year : 2015
Alain Portavoce : Connect in order to contact the contributor
https://amu.hal.science/hal-02385306
Submitted on : Thursday, November 28, 2019-5:12:28 PM
Last modification on : Friday, March 24, 2023-2:53:14 PM
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Anthony de Luca, Michael Texier, Alain Portavoce, Nelly Burle, Catherine Grosjean, et al.. Mechanism of β-FeSi 2 precipitates growth-and-dissolution and pyramidal defects' formation during oxidation of Fe-contaminated silicon wafers. Journal of Applied Physics, 2015, 117 (11), pp.115302. ⟨10.1063/1.4915086⟩. ⟨hal-02385306⟩
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