Lattice and grain-boundary diffusion of As in Ni2Si - Aix-Marseille Université Access content directly
Journal Articles Journal of Applied Physics Year : 2008
No file

Dates and versions

hal-02386151 , version 1 (29-11-2019)

Identifiers

Cite

I. Blum, A. Portavoce, D. Mangelinck, R. Daineche, K. Hoummada, et al.. Lattice and grain-boundary diffusion of As in Ni2Si. Journal of Applied Physics, 2008, 104 (11), pp.114312. ⟨10.1063/1.3035836⟩. ⟨hal-02386151⟩
42 View
0 Download

Altmetric

Share

Gmail Facebook X LinkedIn More