Lattice and grain-boundary diffusion of As in Ni2Si - Aix-Marseille Université Access content directly
Journal Articles Journal of Applied Physics Year : 2008
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hal-02386151 , version 1 (29-11-2019)

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Ivan Blum, A. Portavoce, D. Mangelinck, R. Daineche, K. Hoummada, et al.. Lattice and grain-boundary diffusion of As in Ni2Si. Journal of Applied Physics, 2008, 104 (11), pp.114312. ⟨10.1063/1.3035836⟩. ⟨hal-02386151⟩
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