Lattice diffusion and surface segregation of B during growth of SiGe heterostructures by molecular beam epitaxy: Effect of Ge concentration and biaxial stress - Aix-Marseille Université Access content directly
Journal Articles Journal of Applied Physics Year : 2004

Lattice diffusion and surface segregation of B during growth of SiGe heterostructures by molecular beam epitaxy: Effect of Ge concentration and biaxial stress

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hal-02386263 , version 1 (29-11-2019)

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A. Portavoce, P. Gas, I. Berbezier, A. Ronda, J. Christensen, et al.. Lattice diffusion and surface segregation of B during growth of SiGe heterostructures by molecular beam epitaxy: Effect of Ge concentration and biaxial stress. Journal of Applied Physics, 2004, 96 (6), pp.3158-3163. ⟨10.1063/1.1781767⟩. ⟨hal-02386263⟩
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