Journal Articles
Journal of Applied Physics
Year : 2004
Alain Portavoce : Connect in order to contact the contributor
https://amu.hal.science/hal-02386263
Submitted on : Friday, November 29, 2019-11:31:57 AM
Last modification on : Friday, March 24, 2023-2:53:14 PM
Dates and versions
Identifiers
- HAL Id : hal-02386263 , version 1
- ARXIV : cond-mat/0409256
- DOI : 10.1063/1.1781767
Cite
A. Portavoce, P. Gas, I. Berbezier, A. Ronda, J. Christensen, et al.. Lattice diffusion and surface segregation of B during growth of SiGe heterostructures by molecular beam epitaxy: Effect of Ge concentration and biaxial stress. Journal of Applied Physics, 2004, 96 (6), pp.3158-3163. ⟨10.1063/1.1781767⟩. ⟨hal-02386263⟩
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