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Journal Articles Defect and Diffusion Forum Year : 2009

Atom redistribution during co-doped amorphous silicon crystallization


Atom redistribution during crystallization of a B and P co-doped amorphous Si layer produced by Si and P chemical vapor co-deposition and B implantation has been investigated. The crystallization of the entire layer is quasi-instantaneous for annealing temperature greater than 650 °C. The crystallization rate is well reproduced by the Avrami-Johnson-Mehl-Kolmogorov model of transformation. The Avrami n is found equal to 4, which is corresponding to 3D bulk crystallization. Crystallization promotes a non-Fickian redistribution of B atoms, allowing for an abrupt interface between B-doped and B-undoped regions. After crystallization, B diffuses in the polycrystalline Si layer for concentrations lower than 1.5 × 10 20 at cm −3 via the type B kinetic regime. Crystallization has no significant (or detectable) influence on the P profile. For temperatures higher than 750 °C, P diffuses in the poly-Si layer towards the region of highest B concentration via the type B kinetic regime, leading to P uphill diffusion. This phenomenon can be simulated considering chemical interactions between B and P atoms in both grains and grain boundaries.
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Dates and versions

hal-02406667 , version 1 (12-12-2019)


  • HAL Id : hal-02406667 , version 1


A. Portavoce, D. Mangelinck, R Simola, R Daineche, J. Bernardini. Atom redistribution during co-doped amorphous silicon crystallization. Defect and Diffusion Forum, 2009, 289-292, pp.329-337. ⟨hal-02406667⟩
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