Boron Redistribution During Crystallization of Phosphorus-Doped Amorphous Silicon - Aix-Marseille Université Access content directly
Journal Articles AIP Conference Proceedings Year : 2006

Boron Redistribution During Crystallization of Phosphorus-Doped Amorphous Silicon

Abstract

The redistribution of boron has been studied during solid phase crystallization (SPC) of a homogeneous phosphorus-doped amorphous silicon layer deposited by low pressure chemical vapor deposition, for different thermal annealing. We show that for the lower temperature annealing (T = 586 °C, 1h) boron diffuses without changing the P profile, while for the higher temperature annealing (T = 800 °C, 3h), the initially homogeneous P profile is modified, showing two concentration peaks.
Fichier principal
Vignette du fichier
IIT866_125.pdf (583.9 Ko) Télécharger le fichier
Loading...

Dates and versions

hal-02406692 , version 1 (12-12-2019)

Identifiers

  • HAL Id : hal-02406692 , version 1

Cite

R. Simola, Dominique Mangelinck, A. Portavoce, J. Bernardini, P. Fornara. Boron Redistribution During Crystallization of Phosphorus-Doped Amorphous Silicon. AIP Conference Proceedings, 2006, 866. ⟨hal-02406692⟩
11 View
182 Download

Share

Gmail Facebook X LinkedIn More