Black silicon (BS) using room-temperature reactive ion etching (RT-RIE) for interdigitated back contact (IBC) silicon solar cells - Aix-Marseille Université
Conference Papers Year : 2019

Black silicon (BS) using room-temperature reactive ion etching (RT-RIE) for interdigitated back contact (IBC) silicon solar cells

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Optics / Photonic Micro and nanotechnologies/Microelectronics Materials

Judikaël Le Rouzo  : Connect in order to contact the contributor

https://amu.hal.science/hal-02450871

Submitted on : Thursday, January 23, 2020-10:30:36 AM

Last modification on : Monday, June 10, 2024-4:58:03 PM

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hal-02450871 , version 1 (23-01-2020)

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Francois Atteia, Judikaël Le Rouzo, Gérard Berginc, Jean-Jacques Simon, Ludovic Escoubas. Black silicon (BS) using room-temperature reactive ion etching (RT-RIE) for interdigitated back contact (IBC) silicon solar cells. Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VIII, Feb 2019, San Francisco, France. pp.29, ⟨10.1117/12.2509326⟩. ⟨hal-02450871⟩

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