%0 Journal Article %T Improved hot-carrier immunity of p-MOSFET’s with 8nm thick nitrided gate-oxide during bidirectionnal stressing %+ Institut supérieur de l'électronique et du numérique (ISEN) %A Bravaix, Alain %A Vuillaume, D. %A Goguenheim, D. %A Dorval, D. %A Haond, M. %< avec comité de lecture %@ 0167-9317 %J Microelectronic Engineering %I Elsevier %S Microelectronic Engineering %V 28 %N 1-4 %8 1995-06 %D 1995 %R 10.1016/0167-9317(95)00058-G %K Hot-Carrier %K Nitrided oxide %K p-MOSFET %K AC stressing %K pass Transistor %Z Engineering Sciences [physics]Journal articles %X The hot-carrier reliability in p+ poly-gate p-MOSFET's with pure and nitrided 8nm thick gate-oxide is investigated under uniform and localized electron injections. The effects of bidirectionally DC-(AC) stressing on the saturated (linear) - mode transistor parameters are monitored as they represent the worst limitating factor in pass transistors for digital logic applications. With a proper RTA condition and nitridation ambient, it is found that the gate-oxide process obtained by low-pressure plasma nitridation shows better hot-carrier immunity than pure oxide with a significant reduction of charge trapping. %G English %L hal-03022975 %U https://amu.hal.science/hal-03022975 %~ UNIV-AMU %~ IEMN