Single-crystalline nanoribbon network field effect transistors from arbitrary two-dimensional materials - Aix-Marseille Université Access content directly
Journal Articles npj 2D Materials and Applications Year : 2022

Single-crystalline nanoribbon network field effect transistors from arbitrary two-dimensional materials

Muhammad Awais Aslam
Tuan Hoang Tran
Antonio Supina
  • Function : Author
Vincent Meunier
  • Function : Author
Kenji Watanabe
Takashi Taniguchi
Marko Kralj
Christian Teichert
  • Function : Author
Evgeniya Sheremet
  • Function : Author
Raul Rodriguez
  • Function : Author
Aleksandar Matković

Abstract

Abstract The last decade has seen a flurry of studies related to graphene nanoribbons owing to their potential applications in the quantum realm. However, little experimental work has been reported towards nanoribbons of other 2D materials. Here, we propose a universal approach to synthesize high-quality networks of nanoribbons from arbitrary 2D materials while maintaining high crystallinity, narrow size distribution, and straightforward device integrability. The wide applicability of this technique is demonstrated by fabricating molybednum disulphide, tungsten disulphide, tungsten diselenide, and graphene nanoribbon field effect transistors that inherently do not suffer from interconnection resistance. By relying on self-aligning organic nanostructures as masks, we demonstrate the possibility of controlling the predominant crystallographic direction of the nanoribbon’s edges. Electrical characterization shows record mobilities and very high ON currents despite extreme width scaling. Lastly, we explore decoration of nanoribbon edges with plasmonic particles paving the way for nanoribbon-based opto-electronic devices.

Dates and versions

hal-03868502 , version 1 (23-11-2022)

Identifiers

Cite

Muhammad Awais Aslam, Tuan Hoang Tran, Antonio Supina, Olivier Siri, Vincent Meunier, et al.. Single-crystalline nanoribbon network field effect transistors from arbitrary two-dimensional materials. npj 2D Materials and Applications, 2022, 6 (1), pp.76. ⟨10.1038/s41699-022-00356-y⟩. ⟨hal-03868502⟩

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