Physics-based Analytical Formulation of the Soft Error Rate in CMOS Circuits
Résumé
The exponential dependence of the soft-error rate (SER) with critical charge in CMOS circuits, empirically proposed by Hazucha and Svensson, is derived in the framework of the diffusion-collection approach. A full analytical formulation is established, linking the SER with physical and technological parameters, notably the circuit supply voltage, carrier diffusion coefficient and ion characteristics.
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