Impact of Total Ionizing Dose on the alpha-Soft Error Rate in FDSOI 28 nm SRAMs
Abstract
Synergy effect of total ionizing dose (TID) on alpha-soft error rate (a-SER) in FDSOI 28nm SRAM has been experimentally characterized using a dedicated setup combining alpha-particle irradiation (241 Am solid source) in vacuum chamber and 10 keV X-ray irradiation. Modeling and simulation have been used to link transistor threshold voltage variations to SRAM cell stability in terms of static noise margin (SNM), critical charge (Qcrit) and finally estimated SER, in good agreement with experimental results.
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