Impact of Total Ionizing Dose on the alpha-Soft Error Rate in FDSOI 28 nm SRAMs - Aix-Marseille Université
Conference Papers Year : 2023

Impact of Total Ionizing Dose on the alpha-Soft Error Rate in FDSOI 28 nm SRAMs

Abstract

Synergy effect of total ionizing dose (TID) on alpha-soft error rate (a-SER) in FDSOI 28nm SRAM has been experimentally characterized using a dedicated setup combining alpha-particle irradiation (241 Am solid source) in vacuum chamber and 10 keV X-ray irradiation. Modeling and simulation have been used to link transistor threshold voltage variations to SRAM cell stability in terms of static noise margin (SNM), critical charge (Qcrit) and finally estimated SER, in good agreement with experimental results.
Fichier principal
Vignette du fichier
ESREF_2023_HAL.pdf (2.36 Mo) Télécharger le fichier
Origin Files produced by the author(s)

Dates and versions

hal-04177735 , version 1 (05-08-2023)

Identifiers

  • HAL Id : hal-04177735 , version 1

Cite

Soilihi Moindje, Daniela Munteanu, Jean-Luc Autran, Victor Malherbe, Gilles Gasiot, et al.. Impact of Total Ionizing Dose on the alpha-Soft Error Rate in FDSOI 28 nm SRAMs. European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2023), Oct 2023, Toulouse, France. ⟨hal-04177735⟩
31 View
26 Download

Share

More