Random-Walk Drift-Diffusion Charge-Collection Model For Reverse-Biased junctions Embedded in Circuits - Aix-Marseille Université Accéder directement au contenu
Communication Dans Un Congrès Année : 2014

Random-Walk Drift-Diffusion Charge-Collection Model For Reverse-Biased junctions Embedded in Circuits

Résumé

A new computational model for charge transport based on parallelized random-walk drift-diffusion is proposed. The model has been successfully coupled with SPICE for circuit solving and feedback on the charge-collection process.
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Dates et versions

hal-04373073 , version 1 (04-01-2024)

Identifiants

  • HAL Id : hal-04373073 , version 1

Citer

Maximilien Glorieux, Jean-Luc Autran, Daniela Munteanu, Sylvain Clerc, Gilles Gasiot, et al.. Random-Walk Drift-Diffusion Charge-Collection Model For Reverse-Biased junctions Embedded in Circuits. IEEE Nuclear and Space Radiation Effects Conference (NSREC 2014), Jul 2014, Paris, France. ⟨hal-04373073⟩
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