Altitude and Underground Real-Time SER Testing of SRAMs Manufactured in CMOS Bulk 130, 65 and 40 nm - Aix-Marseille Université
Communication Dans Un Congrès Année : 2014

Altitude and Underground Real-Time SER Testing of SRAMs Manufactured in CMOS Bulk 130, 65 and 40 nm

Résumé

We present an up-to-date survey of real-time testing results accumulated from 2006 in altitude (ASTEP platform) and underground (Modane Laboratory). Radiation data concern three generations of SRAMs manufactured in CMOS 130, 65 and 40 nm.
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Dates et versions

hal-04373085 , version 1 (04-01-2024)

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  • HAL Id : hal-04373085 , version 1

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Jean-Luc Autran, Daniela Munteanu, Sébastien Sauze, Gilles Gasiot, Philippe Roche. Altitude and Underground Real-Time SER Testing of SRAMs Manufactured in CMOS Bulk 130, 65 and 40 nm. IEEE Nuclear and Space Radiation Effects Conference (NSREC 2014), Jul 2014, Paris, France. ⟨hal-04373085⟩
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