The Junctionless Double-Gate (JL-DGFET) technology is potentially interesting for future ultra-scaled devices, due to the simplified manufacturing process and reduced leakage currents. In this work, we investigate, for the first time, the sensitivity to radiation of 6T SRAM cells built up of JL-DGFETs. A detailed comparison with SRAMs based on inversion-mode devices (FDSOI and IM-DGFET) is performed. Our simulations indicate that JL-DGFET SRAMs are naturally more immune to radiation than FDSOI SRAMs, but more sensitive to radiation than IM-DGFET SRAMs.