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Communication Dans Un Congrès Année : 2012

Effects of Low Energy Muons on Electronics: Physical Insights and Geant4 Simulation

Résumé

The impact of low energy (< 1 MeV) muons on electronics is studied from a physical point-of-view and investigated by numerical simulation using a new release of the TIARA code fully rewritten using the Geant4 toolkit. The effects of both direct ionization and negative muon capture mechanisms on the soft error occurrence in a 65nm CMOS SRAM are carefully examined and discussed.
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Dates et versions

hal-04376254 , version 1 (06-01-2024)

Identifiants

  • HAL Id : hal-04376254 , version 1

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Sébastien Serre, Serguei Semikh, Jean-Luc Autran, Daniela Munteanu, Gilles Gasiot, et al.. Effects of Low Energy Muons on Electronics: Physical Insights and Geant4 Simulation. European Workshop on Radiation and its Effects on Components and Systems (RADECS 2012), Sep 2012, Biarritz (France), France. ⟨hal-04376254⟩
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