Effects of Low Energy Muons on Electronics: Physical Insights and Geant4 Simulation
Résumé
The impact of low energy (< 1 MeV) muons on electronics is studied from a physical point-of-view and investigated by numerical simulation using a new release of the TIARA code fully rewritten using the Geant4 toolkit. The effects of both direct ionization and negative muon capture mechanisms on the soft error occurrence in a 65nm CMOS SRAM are carefully examined and discussed.
| Origine | Fichiers produits par l'(les) auteur(s) |
|---|