3-D Numerical Simulation of Bipolar Amplification in Junctionless Double-Gate MOSFETs under Heavy-Ion Irradiation - Aix-Marseille Université
Communication Dans Un Congrès Année : 2011

3-D Numerical Simulation of Bipolar Amplification in Junctionless Double-Gate MOSFETs under Heavy-Ion Irradiation

Résumé

The bipolar amplification and charge collection in Junctionless Double-Gate MOSFETs (JL-DGFET) submitted to heavy-ion irradiation are investigated. The transient response of JL-DGFET is compared to that of conventional devices operating in inversion mode (IM-DGFET). We show that the bipolar amplification is higher in junctionless devices than in conventional inversion-mode devices mainly due to the higher doping levels in the channel.

Domaines

Micro et nanotechnologies/Microélectronique

Daniela Munteanu  : Connectez-vous pour contacter le contributeur

https://amu.hal.science/hal-04386582

Soumis le : mercredi 10 janvier 2024-22:30:11

Dernière modification le : lundi 10 juin 2024-16:58:03

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Dates et versions

hal-04386582 , version 1 (10-01-2024)

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Citer

Daniela Munteanu, Jean-Luc Autran. 3-D Numerical Simulation of Bipolar Amplification in Junctionless Double-Gate MOSFETs under Heavy-Ion Irradiation. 12th European Workshop on Radiation and its Effects on Components and Systems (RADECS 2011), Sep 2011, Sevilla, Spain. pp.73-76, ⟨10.1109/RADECS.2011.6131370⟩. ⟨hal-04386582⟩

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