Ion implantation investigation for the passivation of cut edge solar cells
Résumé
This work aims to study the use of P-III (Plasma-Immersion Ion Implantation) to passivate the cut edges of half Silicon HeteroJuntion (SHJ) and Tunnel Oxide Passivated Contact (TOPCon) technologies. The samples are cut using the Thermal Laser Separation process (TLS-Dicing TM). Edges quality and sample performances are measured via Light Beam Induced Current (LBIC) and Suns-Voc to evaluate the degradation after the cutting process. The Passivation by P-III is carried out under different conditions, varying the type of gas, the dose, the plasma mode and the plasma potential. Results show no significant gain when SHJ and TOPCon half cells are implanted using H2 plasma gaz. However, the use of O2 plasma to passivate TOPCon cut edges shows interesting results which need to be confirmed on a larger group of samples.
Domaines
Sciences de l'ingénieur [physics]Origine | Fichiers produits par l'(les) auteur(s) |
---|