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authFullName_s : D. Goguenheim

Comment on "Hot-Hole induced negative oxide charges in N-MOSFET's

Dominique Vuillaume , A. Bravaix , D. Goguenheim , J.-C. Marchetaux , A. Boudou
IEEE Transactions on Electron Devices, 1996, IEEE Transaction on Electron devices, 43 (9), pp.1473-1477. ⟨10.1109/16.535337⟩
Journal articles hal-03022993v1

Impact of wafer charging on hot carrier reliability and optimization of latent damage detection methodology in advanced CMOS technologies

D. Goguenheim , Alain Bravaix , S. Gomri , J.M. Moragues , C. Monserie , et al.
Microelectronics Reliability, 2005, Microelectronics Reliability, 45 (3-4), pp.487-492. ⟨10.1016/j.microrel.2004.09.004⟩
Journal articles hal-03661139v1

Analysis of high temperature effects on performances and hot-carrier degradation in DC/AC stressed 0.35 μm n-MOSFETs

Alain Bravaix , D. Goguenheim , N. Revil , E. Vincent , M. Varrot , et al.
Microelectronics Reliability, 1999, Microelectronics Reliability, 39 (1), pp.35-44. ⟨10.1016/S0026-2714(98)00166-8⟩
Journal articles hal-03689806v1

Analysis of high temperature effects on performances and hot-carrier degradation in DC/AC stressed 0.35 μm n-MOSFETs

Alain Bravaix , D. Goguenheim , N. Revil , E. Vincent , M. Varrot , et al.
Microelectronics Reliability, 1999, Microelectronics Reliability, 39 (1), pp.35-44. ⟨10.1016/S0026-2714(98)00166-8⟩
Journal articles hal-03674439v1

Carrier injection efficiency for the reliability study of 3.5–1.2 nm thick gate-oxide CMOS technologies

Alain Bravaix , C. Trapes , D. Goguenheim , N. Revil , E. Vincent
Microelectronics Reliability, 2003, Microelectronics Reliability, 43 (8), pp.1241-1246. ⟨10.1016/S0026-2714(03)00178-1⟩
Journal articles hal-03667780v1

Integrated continuous microstimulation system for deep brain stimulation in rodent models of neurological disorders

Edith Kussener , T. Barroca , B. Lincoln , P. Salin , C. Forni , et al.
2010 8th IEEE International NEWCAS Conference (NEWCAS), Jun 2010, Montreal, France. ⟨10.1109/NEWCAS.2010.5603773⟩
Conference papers hal-01856890v1

Experimental study of the quasi-breakdown failure mechanism in 4.5 nm-thick SiO2 oxides

D. Goguenheim , Alain Bravaix , Dominique Vuillaume , F. Mondon , Ph. Candelier , et al.
Microelectronics Reliability, 1999, Microelectronics Reliability, 39 (2), pp.165-169. ⟨10.1016/S0026-2714(98)00215-7⟩
Journal articles hal-03689782v1

Experimental extraction of degradation parameters after constant voltage stress and substrate hot electron injection on ultrathin oxides

C. Trapes , D. Goguenheim , Alain Bravaix
Microelectronics Reliability, 2005, Microelectronics Reliability, 45 (5-6), pp.883-886. ⟨10.1016/j.microrel.2004.10.025⟩
Journal articles hal-03661125v1

Turn-around effects during dynamic operation in 0.25μm CMOS technology from low to high temperature

A. Bravaix , D. Goguenheim , E. Vincent , N Revil
Microelectronic Engineering, 1999, 48 (1-4), pp.163-166. ⟨10.1016/S0167-9317(99)00362-7⟩
Journal articles istex hal-03689736v1

Impacts of the recovery phenomena on the worst-case of damage in DC/AC stressed ultra-thin NO gate-oxide MOSFETs

Alain Bravaix , D. Goguenheim , M. Denais , V. Huard , C. Parthasarathy , et al.
Microelectronics Reliability, 2005, 45 (9-11), pp.1370-1375. ⟨10.1016/j.microrel.2005.07.023⟩
Journal articles hal-03661088v1

Hole injection enhanced hot-carrier degradation in PMOSFETs used for systems on chip applications with 6.5–2 nm thick gate-oxides

Alain Bravaix , D. Goguenheim , N. Revil , E. Vincent
Microelectronics Reliability, 2004, Microelectronics Reliability, 44 (1), pp.65-77. ⟨10.1016/j.microrel.2003.10.002⟩
Journal articles hal-03661184v1
Image document

Oxidation kinetics of Ni metallic films: formation of NiO-based resistive switching structures

L. Courtade , Ch. Turquat , Christophe Muller , J.G. Lisoni , L. Goux , et al.
Thin Solid Films, 2008, 516 (12), pp.4083-4092. ⟨10.1016/j.tsf.2007.09.050⟩
Journal articles hal-00187467v1

A coupled I(V) and charge-pumping analysis of Stress Induced Leakage Currents in 5nm-thick gate oxides

D. Goguenheim , Alain Bravaix , D. Vuillaume , F. Mondon , P. Candelierd , et al.
Microelectronic Engineering, 1997, Microelectronic Engineering, 36 (1-4), pp.141-144. ⟨10.1016/S0167-9317(97)00035-X⟩
Journal articles istex hal-03023026v1

Influences of the different degradation mechanisms in AC-stressed p-MOSFET's during pass transistor operation

Alain Bravaix , D. Goguenheim , D. Vuillaume , N. Revil , M. Varrot , et al.
Microelectronic Engineering, 1997, Microelectronic Engineering, 36 (1-4), pp.305-308. ⟨10.1016/S0167-9317(97)00069-5⟩
Journal articles istex hal-03023046v1

Improved hot-carrier immunity of p-MOSFET’s with 8nm thick nitrided gate-oxide during bidirectionnal stressing

Alain Bravaix , D. Vuillaume , D. Goguenheim , D. Dorval , M. Haond
Microelectronic Engineering, 1995, Microelectronic Engineering, 28 (1-4), ⟨10.1016/0167-9317(95)00058-G⟩
Journal articles istex hal-03022975v1

Injection Mechanisms and Lifetime Prediction with the Substrate Voltage in 0.15μm Channel-Length N-MOSFETs

Alain Bravaix , D. Goguenheim , N. Revil , E. Vincent
Microelectronics Reliability, 2001, Microelectronics Reliability, 41 (9-10), pp.1313-1318. ⟨10.1016/S0026-2714(01)00206-2⟩
Journal articles hal-03667870v1

Experimental study of the quasi-breakdown failure mechanism in 4.5 nm-thick SiO2 oxides

D. Goguenheim , Alain Bravaix , Dominique Vuillaume , F. Mondon , Ph. Candelier , et al.
Microelectronics Reliability, 1999, 39 (2), pp.165-169. ⟨10.1016/S0026-2714(98)00215-7⟩
Journal articles hal-03674374v1

Turn-around effects during dynamic operation in 0.25μm CMOS technology from low to high temperature

Alain Bravaix , D. Goguenheim , N. Revil , E. Vincent
Microelectronic Engineering, 1999, 48 (1-4), pp.163-166. ⟨10.1016/S0167-9317(99)00362-7⟩
Journal articles hal-03674329v1

Hot-carrier reliability study of second and first impact ionization degradation in 0.15-μm channel-length N-MOSFETS

Alain Bravaix , D. Goguenheim , N. Revil , E. Vincent
Microelectronic Engineering, 2001, Microelectronic Engineering, 59 (1-4), pp.101-108. ⟨10.1016/S0167-9317(01)00679-7⟩
Journal articles hal-03667898v1