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Comment on "Hot-Hole induced negative oxide charges in N-MOSFET's
Dominique Vuillaume
,
A. Bravaix
,
D. Goguenheim
,
J.-C. Marchetaux
,
A. Boudou
IEEE Transactions on Electron Devices, 1996, IEEE Transaction on Electron devices, 43 (9), pp.1473-1477. ⟨10.1109/16.535337⟩
Journal articles
hal-03022993v1
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Impact of wafer charging on hot carrier reliability and optimization of latent damage detection methodology in advanced CMOS technologies
D. Goguenheim
,
Alain Bravaix
,
S. Gomri
,
J.M. Moragues
,
C. Monserie
,
et al.
Journal articles
hal-03661139v1
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Analysis of high temperature effects on performances and hot-carrier degradation in DC/AC stressed 0.35 μm n-MOSFETs
Alain Bravaix
,
D. Goguenheim
,
N. Revil
,
E. Vincent
,
M. Varrot
,
et al.
Journal articles
hal-03689806v1
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Analysis of high temperature effects on performances and hot-carrier degradation in DC/AC stressed 0.35 μm n-MOSFETs
Alain Bravaix
,
D. Goguenheim
,
N. Revil
,
E. Vincent
,
M. Varrot
,
et al.
Journal articles
hal-03674439v1
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Carrier injection efficiency for the reliability study of 3.5–1.2 nm thick gate-oxide CMOS technologies
Alain Bravaix
,
C. Trapes
,
D. Goguenheim
,
N. Revil
,
E. Vincent
Journal articles
hal-03667780v1
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Integrated continuous microstimulation system for deep brain stimulation in rodent models of neurological disorders
Edith Kussener
,
T. Barroca
,
B. Lincoln
,
P. Salin
,
C. Forni
,
et al.
Conference papers
hal-01856890v1
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Experimental study of the quasi-breakdown failure mechanism in 4.5 nm-thick SiO2 oxides
D. Goguenheim
,
Alain Bravaix
,
Dominique Vuillaume
,
F. Mondon
,
Ph. Candelier
,
et al.
Journal articles
hal-03689782v1
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Experimental extraction of degradation parameters after constant voltage stress and substrate hot electron injection on ultrathin oxides
C. Trapes
,
D. Goguenheim
,
Alain Bravaix
Journal articles
hal-03661125v1
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Turn-around effects during dynamic operation in 0.25μm CMOS technology from low to high temperature
A. Bravaix
,
D. Goguenheim
,
E. Vincent
,
N Revil
Journal articles
istex
hal-03689736v1
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Impacts of the recovery phenomena on the worst-case of damage in DC/AC stressed ultra-thin NO gate-oxide MOSFETs
Alain Bravaix
,
D. Goguenheim
,
M. Denais
,
V. Huard
,
C. Parthasarathy
,
et al.
Journal articles
hal-03661088v1
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Hole injection enhanced hot-carrier degradation in PMOSFETs used for systems on chip applications with 6.5–2 nm thick gate-oxides
Alain Bravaix
,
D. Goguenheim
,
N. Revil
,
E. Vincent
Journal articles
hal-03661184v1
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Oxidation kinetics of Ni metallic films: formation of NiO-based resistive switching structures
L. Courtade
,
Ch. Turquat
,
Christophe Muller
,
J.G. Lisoni
,
L. Goux
,
et al.
Journal articles
hal-00187467v1
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A coupled I(V) and charge-pumping analysis of Stress Induced Leakage Currents in 5nm-thick gate oxides
D. Goguenheim
,
Alain Bravaix
,
D. Vuillaume
,
F. Mondon
,
P. Candelierd
,
et al.
Journal articles
istex
hal-03023026v1
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Influences of the different degradation mechanisms in AC-stressed p-MOSFET's during pass transistor operation
Alain Bravaix
,
D. Goguenheim
,
D. Vuillaume
,
N. Revil
,
M. Varrot
,
et al.
Journal articles
istex
hal-03023046v1
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Improved hot-carrier immunity of p-MOSFET’s with 8nm thick nitrided gate-oxide during bidirectionnal stressing
Alain Bravaix
,
D. Vuillaume
,
D. Goguenheim
,
D. Dorval
,
M. Haond
Journal articles
istex
hal-03022975v1
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Injection Mechanisms and Lifetime Prediction with the Substrate Voltage in 0.15μm Channel-Length N-MOSFETs
Alain Bravaix
,
D. Goguenheim
,
N. Revil
,
E. Vincent
Journal articles
hal-03667870v1
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Experimental study of the quasi-breakdown failure mechanism in 4.5 nm-thick SiO2 oxides
D. Goguenheim
,
Alain Bravaix
,
Dominique Vuillaume
,
F. Mondon
,
Ph. Candelier
,
et al.
Journal articles
hal-03674374v1
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Turn-around effects during dynamic operation in 0.25μm CMOS technology from low to high temperature
Alain Bravaix
,
D. Goguenheim
,
N. Revil
,
E. Vincent
Journal articles
hal-03674329v1
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Hot-carrier reliability study of second and first impact ionization degradation in 0.15-μm channel-length N-MOSFETS
Alain Bravaix
,
D. Goguenheim
,
N. Revil
,
E. Vincent
Journal articles
hal-03667898v1
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