Filter your results
- 3
- 3
- 3
- 2
- 1
- 3
- 2
- 2
- 3
- 3
- 3
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
|
|
sorted by
|
A coupled I(V) and charge-pumping analysis of Stress Induced Leakage Currents in 5nm-thick gate oxidesMicroelectronic Engineering, 1997, Microelectronic Engineering, 36 (1-4), pp.141-144. ⟨10.1016/S0167-9317(97)00035-X⟩
Journal articles
istex
hal-03023026v1
|
|||
Influences of the different degradation mechanisms in AC-stressed p-MOSFET's during pass transistor operationMicroelectronic Engineering, 1997, Microelectronic Engineering, 36 (1-4), pp.305-308. ⟨10.1016/S0167-9317(97)00069-5⟩
Journal articles
istex
hal-03023046v1
|
|||
Improved hot-carrier immunity of p-MOSFET’s with 8nm thick nitrided gate-oxide during bidirectionnal stressingMicroelectronic Engineering, 1995, Microelectronic Engineering, 28 (1-4), ⟨10.1016/0167-9317(95)00058-G⟩
Journal articles
istex
hal-03022975v1
|