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authFullName_s : D. Vuillaume

A coupled I(V) and charge-pumping analysis of Stress Induced Leakage Currents in 5nm-thick gate oxides

D. Goguenheim , Alain Bravaix , D. Vuillaume , F. Mondon , P. Candelierd , et al.
Microelectronic Engineering, 1997, Microelectronic Engineering, 36 (1-4), pp.141-144. ⟨10.1016/S0167-9317(97)00035-X⟩
Journal articles istex hal-03023026v1

Influences of the different degradation mechanisms in AC-stressed p-MOSFET's during pass transistor operation

Alain Bravaix , D. Goguenheim , D. Vuillaume , N. Revil , M. Varrot , et al.
Microelectronic Engineering, 1997, Microelectronic Engineering, 36 (1-4), pp.305-308. ⟨10.1016/S0167-9317(97)00069-5⟩
Journal articles istex hal-03023046v1

Improved hot-carrier immunity of p-MOSFET’s with 8nm thick nitrided gate-oxide during bidirectionnal stressing

Alain Bravaix , D. Vuillaume , D. Goguenheim , D. Dorval , M. Haond
Microelectronic Engineering, 1995, Microelectronic Engineering, 28 (1-4), ⟨10.1016/0167-9317(95)00058-G⟩
Journal articles istex hal-03022975v1