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authFullName_s : Laurent Ottaviani

Electrical Characteristics of SiC UV-Photodetector Device from the P-I-N Structure Behaviour to the Junction Barrier Schottky Structure Behaviour

Stéphane Biondo , Mihai Lazar , Laurent Ottaviani , Wilfried Vervisch , Olivier Palais , et al.
Materials Science Forum, 2012, 711, pp.114-117. ⟨10.4028/www.scientific.net/MSF.711.114⟩
Journal articles hal-04050522v1

4H-SiC Neutron Sensors Based on Ion Implanted 10 B Neutron Converter Layer

Fatima Issa , Laurent Ottaviani , Dora Szalkai , Lvermeer Vermeeren , Vanessa Vervisch , et al.
IEEE Transactions on Nuclear Science, 2016, 63 (3), pp.1976 - 1980. ⟨10.1109/TNS.2016.2565439⟩
Journal articles hal-01389631v1

Optical and Electrical Simulation of 4H-SiC UV Photodetector by Finite Element Method

Stéphane Biondo , Wilfried Vervisch , Laurent Ottaviani , Olivier Palais
Materials Science Forum, 2011, 679-680, pp.563-566. ⟨10.4028/www.scientific.net/MSF.679-680.563⟩
Journal articles hal-03350223v1

4H-SiC Neutron Sensors Based on Ion Implanted 10 B Neutron Converter Layer

Fatima Issa , Laurent Ottaviani , Dora Szalkai , Lvermeer Vermeeren , Vanessa Vervisch , et al.
IEEE Transactions on Nuclear Science, 2016, 63 (3), pp.1976-1980. ⟨10.1109/TNS.2016.2565439⟩
Journal articles hal-03350099v1
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Nickel and gold identification in p-type silicon through TDLS: a modeling study

Sarra Dehili , Damien Barakel , Laurent Ottaviani , Olivier Palais
European Physical Journal: Applied Physics, 2021, 93 (4), pp.40101. ⟨10.1051/epjap/2021210015⟩
Journal articles hal-03196530v1

Study of the Stability of 4H-SiC Detectors by Thermal Neutron Irradiation

Fatima Issa , Laurent Ottaviani , Vanessa Vervisch , Dora Szalkai , Ludo Vermeeren , et al.
Materials Science Forum, 2015, 821-823, pp.875 - 878. ⟨10.4028/www.scientific.net/MSF.821-823.875⟩
Journal articles hal-01391850v1

4H-SiC P +N UV photodiodes: A comparison between beam and plasma doping processes

Stéphane Biondo , Laurent Ottaviani , Mihai Lazar , Dominique Planson , Julian Duchaine , et al.
CSCRM, Sep 2011, Cleveland, United States
Conference papers hal-00747301v1
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On the Improvement of VCO Based Matrix Particle Detector for High Resolution Particles Recognition and Tracking

K. Coulie , W. Rahajandraibe , Laurent Ottaviani
2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS), Oct 2020, Toulouse, France. pp.1-6, ⟨10.1109/RADECS50773.2020.9857723⟩
Conference papers hal-04017035v1
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Front End Electronics for Radiation Detectors Based on SiC: Application to High Dose per Pulse Charged Particle Beam Current Measurement

A. Tchoualack Tchamako , Laurent Ottaviani , Wenceslas Rahajandraibe , Wilfried Vervisch , Vanessa Vervisch , et al.
IEEE Sensors Journal, 2022, 22 (3), pp.2326-2337. ⟨10.1109/JSEN.2021.3117864⟩
Journal articles hal-04026007v1

Comparison of a readout chain dedicated to the signal conditioning of a particle detector and an innovative chain based on a VCO concept

S. Ben Krit , Karin Coulie-Castellani , Wenceslas Rahajandraibe , Laurent Ottaviani , Gilles Micolau , et al.
15. European Conference on Radiation and Its Effects on Components and Systems (Radecs), Sep 2015, Moscou, Russia
Conference papers hal-01594142v1

Implantation of Nitrogen Atoms in 4H-SiC Epitaxial Layers: A Comparison between Standard and Plasma Immersion Processes

Laurent Ottaviani , Stéphane Biondo , Michel Kazan , Olivier Palais , Julian Duchaine , et al.
Advanced Materials Research, 2011, 324, pp.265-268. ⟨10.4028/www.scientific.net/AMR.324.265⟩
Journal articles hal-03350220v1

Influence of Heating and Cooling Rates of Post-Implantation Annealing Process on Al-Implanted 4H-SiC Epitaxial Samples

Laurent Ottaviani , Stéphane Biondo , Stéphane Morata , Olivier Palais , Thierry Sauvage , et al.
Materials Science Forum, 2010, 645-648, pp.717-720. ⟨10.4028/www.scientific.net/MSF.645-648.717⟩
Journal articles hal-03350236v1
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4H-SiC P+N UV Photodiodes : A Comparison between Beam and Plasma Doping Processes

Stéphane Biondo , Laurent Ottaviani , Mihai Lazar , Dominique Planson , Julian Duchaine , et al.
Materials Science Forum, 2012, 717-720, pp.1203-1206. ⟨10.4028/www.scientific.net/MSF.717-720.1203⟩
Journal articles hal-02275699v1
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High Electrical Activation of Aluminium and Nitrogen Implanted in 6H-SiC at Room Temperature by RF Annealing

Mihai Lazar , Laurent Ottaviani , Marie-Laure Locatelli , Christophe Raynaud , Dominique Planson , et al.
Materials Science Forum, 2001, 353-356, pp.571-574. ⟨10.4028/www.scientific.net/MSF.353-356.571⟩
Journal articles hal-02151710v1

Electrical characteristics of SiC UV-Photodetector device : from the p-i-n structure behaviour to the Junction Barrier Schottky structure behaviour

Stéphane Biondo , Mihai Lazar , Laurent Ottaviani , Wilfried Vervisch , Olivier Palais , et al.
HeteroSiC & WASMPE 2011, Jun 2011, Tours, France. pp.114-117, ⟨10.4028/www.scientific.net/MSF.711.114⟩
Conference papers hal-00661511v1

Lifetime Measurement in n-Type 4H-SiC by Mean of the Microwave Phase-Shift

Baptiste Berenguier , Olivier Palais , Sylvain Bertaina , Laurent Ottaviani , A. Lyoussi
Materials Science Forum, 2016, 858, pp.337-340. ⟨10.4028/www.scientific.net/MSF.858.337⟩
Journal articles hal-03350123v1

4H-silicon carbide thin junction based ultraviolet photodetectors

Stéphane Biondo , Mihai Lazar , Laurent Ottaviani , Wilfried Vervisch , Vincent Le Borgne , et al.
Thin Solid Films, 2012, in press. ⟨10.1016/j.tsf.2011.12.079⟩
Journal articles istex hal-00747356v1
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Post-Implantation Annealing of Aluminium in 6H-SiC

Laurent Ottaviani , Dominique Planson , Marie-Laure Locatelli , Jean-Pierre Chante , B. Canut , et al.
Materials Science Forum, 1998, 264-268, pp.709-712. ⟨10.4028/www.scientific.net/MSF.264-268.709⟩
Journal articles hal-02281029v1

4H-SiC P+N UV Photodiodes for Space Applications

B. Berenguier , Laurent Ottaviani , Stéphane Biondo , Mihai Lazar , Frédéric Milesi , et al.
Materials Science Forum, 2015, 821-823, pp.644 - 647. ⟨10.4028/www.scientific.net/MSF.821-823.644⟩
Journal articles hal-01391847v1

Influence on electrical characteristics of the design of 4H-SiC ultraviolet photodetectors: Theoretical analysis and simulations

Stéphane Biondo , Wilfried Vervisch , Laurent Ottaviani , Olivier Palais
Journal of Applied Physics, 2012, 111 (2), pp.024506. ⟨10.1063/1.3676284⟩
Journal articles hal-03350206v1
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Particle Identification and Tracking by the Use of a Pixel-Based Semiconductor Radiation Detector Coupled with Voltage Controlled Oscillators

K. Coulié , Wenceslas Rahajandraibe , Laurent Ottaviani
ANIMMA 2021 – Advancements in Nuclear Instrumentation Measurement Methods and their Applications, Jun 2021, Pragues (CZ), Czech Republic. pp.09007, ⟨10.1051/epjconf/202125309007⟩
Conference papers hal-04044407v1

Bipolar silicon carbide power diodes realized by aluminum implantations and high temperature rf-annealing

Mihai Lazar , Karine Isoird , Laurent Ottaviani , Marie-Laure Locatelli , Christophe Raynaud , et al.
43rd Electronic Materials Conference (EMC 2001), Jun 2001, Notre Dame, IN, United States
Conference papers hal-02275712v1
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High Electrical Activation of Aluminium and Nitrogen Implanted in 6H-SiC at Room Temperature by RF Annealing

Mihai Lazar , Laurent Ottaviani , Marie-Laure Locatelli , Christophe Raynaud , Dominique Planson , et al.
European Conference on Silicon Carbide and Related Materials 2000 (ECSCRM 2000), Sep 2000, Kloster Banz, Germany. pp.MoP-72
Conference papers hal-02151711v1
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A Comparative Study of High-Temperature Aluminum Post-Implantation Annealing in 6H- and 4H-SiC, Non-Uniform Temperature Effects

Mihai Lazar , Christophe Raynaud , Dominique Planson , Marie-Laure Locatelli , K. Isoird , et al.
Materials Science Forum, 2002, 389-393, pp.827-830. ⟨10.4028/www.scientific.net/MSF.389-393.827⟩
Journal articles hal-02151714v1

Charge Trapping Dynamics in PbS Colloidal Quantum Dot Photovoltaic Devices

Artem A. Bakulin , Stefanie Neutzner , Huib J. Bakker , Laurent Ottaviani , Damien Barakel , et al.
ACS Nano, 2013, 7 (10), pp.8771-8779. ⟨10.1021/nn403190s⟩
Journal articles hal-01802911v1
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Influence of P+ layer parameters on 4H-SiC UV PiN photodetector characteristics

Laurent Ottaviani , Stéphane Biondo , Mihai Lazar , Wilfried Vervisch , Julian Duchaine , et al.
WOCSDICE, May 2011, Catania, Italy. pp.181
Conference papers hal-00661522v1

Study of Defects Generated by Standard- and Plasma-Implantation of Nitrogen Atoms in 4H-SiC Epitaxial Layers

Laurent Ottaviani , Michel Kazan , Stephane Biondo , Filip Tuomisto , Frédéric Milesi , et al.
Materials Science Forum, 2012, 725, pp.41-44. ⟨10.4028/www.scientific.net/MSF.725.41⟩
Journal articles hal-03350211v1
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Silicon Carbide Neutron Detectors for Harsh Nuclear Environments: A Review of the State of the Art

Frank Ruddy , Laurent Ottaviani , Abdallah Lyoussi , Christophe Destouches , Olivier Palais , et al.
IEEE Transactions on Nuclear Science, 2022, 69 (4), pp.792-803. ⟨10.1109/TNS.2022.3144125⟩
Journal articles hal-03930420v1