Electrical Characteristics of SiC UV-Photodetector Device from the P-I-N Structure Behaviour to the Junction Barrier Schottky Structure Behaviour
Stéphane Biondo
,
Mihai Lazar
,
Laurent Ottaviani
,
Wilfried Vervisch
,
Olivier Palais
,
et al.
Journal articles
hal-04050522v1
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4H-SiC Neutron Sensors Based on Ion Implanted 10 B Neutron Converter Layer
Fatima Issa
,
Laurent Ottaviani
,
Dora Szalkai
,
Lvermeer Vermeeren
,
Vanessa Vervisch
,
et al.
Journal articles
hal-01389631v1
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Optical and Electrical Simulation of 4H-SiC UV Photodetector by Finite Element Method
Stéphane Biondo
,
Wilfried Vervisch
,
Laurent Ottaviani
,
Olivier Palais
Journal articles
hal-03350223v1
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4H-SiC Neutron Sensors Based on Ion Implanted 10 B Neutron Converter Layer
Fatima Issa
,
Laurent Ottaviani
,
Dora Szalkai
,
Lvermeer Vermeeren
,
Vanessa Vervisch
,
et al.
Journal articles
hal-03350099v1
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Nickel and gold identification in p-type silicon through TDLS: a modeling study
Sarra Dehili
,
Damien Barakel
,
Laurent Ottaviani
,
Olivier Palais
Journal articles
hal-03196530v1
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Study of the Stability of 4H-SiC Detectors by Thermal Neutron Irradiation
Fatima Issa
,
Laurent Ottaviani
,
Vanessa Vervisch
,
Dora Szalkai
,
Ludo Vermeeren
,
et al.
Journal articles
hal-01391850v1
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4H-SiC P +N UV photodiodes: A comparison between beam and plasma doping processes
Stéphane Biondo
,
Laurent Ottaviani
,
Mihai Lazar
,
Dominique Planson
,
Julian Duchaine
,
et al.
CSCRM , Sep 2011, Cleveland, United States
Conference papers
hal-00747301v1
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On the Improvement of VCO Based Matrix Particle Detector for High Resolution Particles Recognition and Tracking
K. Coulie
,
W. Rahajandraibe
,
Laurent Ottaviani
Conference papers
hal-04017035v1
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Front End Electronics for Radiation Detectors Based on SiC: Application to High Dose per Pulse Charged Particle Beam Current Measurement
A. Tchoualack Tchamako
,
Laurent Ottaviani
,
Wenceslas Rahajandraibe
,
Wilfried Vervisch
,
Vanessa Vervisch
,
et al.
Journal articles
hal-04026007v1
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Comparison of a readout chain dedicated to the signal conditioning of a particle detector and an innovative chain based on a VCO concept
S. Ben Krit
,
Karin Coulie-Castellani
,
Wenceslas Rahajandraibe
,
Laurent Ottaviani
,
Gilles Micolau
,
et al.
15. European Conference on Radiation and Its Effects on Components and Systems (Radecs) , Sep 2015, Moscou, Russia
Conference papers
hal-01594142v1
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Implantation of Nitrogen Atoms in 4H-SiC Epitaxial Layers: A Comparison between Standard and Plasma Immersion Processes
Laurent Ottaviani
,
Stéphane Biondo
,
Michel Kazan
,
Olivier Palais
,
Julian Duchaine
,
et al.
Journal articles
hal-03350220v1
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Influence of Heating and Cooling Rates of Post-Implantation Annealing Process on Al-Implanted 4H-SiC Epitaxial Samples
Laurent Ottaviani
,
Stéphane Biondo
,
Stéphane Morata
,
Olivier Palais
,
Thierry Sauvage
,
et al.
Journal articles
hal-03350236v1
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4H-SiC P+ N UV Photodiodes : A Comparison between Beam and Plasma Doping Processes
Stéphane Biondo
,
Laurent Ottaviani
,
Mihai Lazar
,
Dominique Planson
,
Julian Duchaine
,
et al.
Journal articles
hal-02275699v1
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High Electrical Activation of Aluminium and Nitrogen Implanted in 6H-SiC at Room Temperature by RF Annealing
Mihai Lazar
,
Laurent Ottaviani
,
Marie-Laure Locatelli
,
Christophe Raynaud
,
Dominique Planson
,
et al.
Journal articles
hal-02151710v1
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Electrical characteristics of SiC UV-Photodetector device : from the p-i-n structure behaviour to the Junction Barrier Schottky structure behaviour
Stéphane Biondo
,
Mihai Lazar
,
Laurent Ottaviani
,
Wilfried Vervisch
,
Olivier Palais
,
et al.
Conference papers
hal-00661511v1
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Lifetime Measurement in n-Type 4H-SiC by Mean of the Microwave Phase-Shift
Baptiste Berenguier
,
Olivier Palais
,
Sylvain Bertaina
,
Laurent Ottaviani
,
A. Lyoussi
Journal articles
hal-03350123v1
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4H-silicon carbide thin junction based ultraviolet photodetectors
Stéphane Biondo
,
Mihai Lazar
,
Laurent Ottaviani
,
Wilfried Vervisch
,
Vincent Le Borgne
,
et al.
Journal articles
istex
hal-00747356v1
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Post-Implantation Annealing of Aluminium in 6H-SiC
Laurent Ottaviani
,
Dominique Planson
,
Marie-Laure Locatelli
,
Jean-Pierre Chante
,
B. Canut
,
et al.
Journal articles
hal-02281029v1
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4H-SiC P+ N UV Photodiodes for Space Applications
B. Berenguier
,
Laurent Ottaviani
,
Stéphane Biondo
,
Mihai Lazar
,
Frédéric Milesi
,
et al.
Journal articles
hal-01391847v1
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Influence on electrical characteristics of the design of 4H-SiC ultraviolet photodetectors: Theoretical analysis and simulations
Stéphane Biondo
,
Wilfried Vervisch
,
Laurent Ottaviani
,
Olivier Palais
Journal articles
hal-03350206v1
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Particle Identification and Tracking by the Use of a Pixel-Based Semiconductor Radiation Detector Coupled with Voltage Controlled Oscillators
K. Coulié
,
Wenceslas Rahajandraibe
,
Laurent Ottaviani
ANIMMA 2021 – Advancements in Nuclear Instrumentation Measurement Methods and their Applications , Jun 2021, Pragues (CZ), Czech Republic. pp.09007,
⟨10.1051/epjconf/202125309007⟩
Conference papers
hal-04044407v1
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Bipolar silicon carbide power diodes realized by aluminum implantations and high temperature rf-annealing
Mihai Lazar
,
Karine Isoird
,
Laurent Ottaviani
,
Marie-Laure Locatelli
,
Christophe Raynaud
,
et al.
43rd Electronic Materials Conference (EMC 2001) , Jun 2001, Notre Dame, IN, United States
Conference papers
hal-02275712v1
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High Electrical Activation of Aluminium and Nitrogen Implanted in 6H-SiC at Room Temperature by RF Annealing
Mihai Lazar
,
Laurent Ottaviani
,
Marie-Laure Locatelli
,
Christophe Raynaud
,
Dominique Planson
,
et al.
European Conference on Silicon Carbide and Related Materials 2000 (ECSCRM 2000) , Sep 2000, Kloster Banz, Germany. pp.MoP-72
Conference papers
hal-02151711v1
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A Comparative Study of High-Temperature Aluminum Post-Implantation Annealing in 6H- and 4H-SiC, Non-Uniform Temperature Effects
Mihai Lazar
,
Christophe Raynaud
,
Dominique Planson
,
Marie-Laure Locatelli
,
K. Isoird
,
et al.
Journal articles
hal-02151714v1
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Charge Trapping Dynamics in PbS Colloidal Quantum Dot Photovoltaic Devices
Artem A. Bakulin
,
Stefanie Neutzner
,
Huib J. Bakker
,
Laurent Ottaviani
,
Damien Barakel
,
et al.
Journal articles
hal-01802911v1
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Influence of P+ layer parameters on 4H-SiC UV PiN photodetector characteristics
Laurent Ottaviani
,
Stéphane Biondo
,
Mihai Lazar
,
Wilfried Vervisch
,
Julian Duchaine
,
et al.
WOCSDICE , May 2011, Catania, Italy. pp.181
Conference papers
hal-00661522v1
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Study of Defects Generated by Standard- and Plasma-Implantation of Nitrogen Atoms in 4H-SiC Epitaxial Layers
Laurent Ottaviani
,
Michel Kazan
,
Stephane Biondo
,
Filip Tuomisto
,
Frédéric Milesi
,
et al.
Journal articles
hal-03350211v1
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Silicon Carbide Neutron Detectors for Harsh Nuclear Environments: A Review of the State of the Art
Frank Ruddy
,
Laurent Ottaviani
,
Abdallah Lyoussi
,
Christophe Destouches
,
Olivier Palais
,
et al.
Journal articles
hal-03930420v1
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