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4H-SiC P +N UV photodiodes: A comparison between beam and plasma doping processes
Stéphane Biondo
,
Laurent Ottaviani
,
Mihai Lazar
,
Dominique Planson
,
Julian Duchaine
,
et al.
CSCRM, Sep 2011, Cleveland, United States
Conference papers
hal-00747301v1
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Optical-electrical simulation of organic solar cells: Influence of light trapping by photonic crystal and ZnO spacer on electrical characteristics
Wilfried Vervisch
,
Guillaume Riviere
,
Sylvain Vedraine
,
Stéphane Biondo
,
Philippe Torchio
,
et al.
Journal articles
hal-00911113v1
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Influence of Heating and Cooling Rates of Post-Implantation Annealing Process on Al-Implanted 4H-SiC Epitaxial Samples
Laurent Ottaviani
,
Stéphane Biondo
,
Stéphane Morata
,
Olivier Palais
,
Thierry Sauvage
,
et al.
Journal articles
hal-03350236v1
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4H-SiC P+N UV Photodiodes : A Comparison between Beam and Plasma Doping Processes
Stéphane Biondo
,
Laurent Ottaviani
,
Mihai Lazar
,
Dominique Planson
,
Julian Duchaine
,
et al.
Journal articles
hal-02275699v1
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Electrical characteristics of SiC UV-Photodetector device : from the p-i-n structure behaviour to the Junction Barrier Schottky structure behaviour
Stéphane Biondo
,
Mihai Lazar
,
Laurent Ottaviani
,
Wilfried Vervisch
,
Olivier Palais
,
et al.
Conference papers
hal-00661511v1
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Optical-electrical simulation of organic solar cells: excitonic modeling parameter influence on electrical characteristics
Wilfried Vervisch
,
Stéphane Biondo
,
Guillaume Rivière
,
David Duche
,
Ludovic Escoubas
,
et al.
Journal articles
hal-01757663v1
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Implantation of Nitrogen Atoms in 4H-SiC Epitaxial Layers: A Comparison between Standard and Plasma Immersion Processes
Laurent Ottaviani
,
Stéphane Biondo
,
Michel Kazan
,
Olivier Palais
,
Julian Duchaine
,
et al.
Journal articles
hal-03350220v1
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Electrical Characteristics of SiC UV-Photodetector Device from the P-I-N Structure Behaviour to the Junction Barrier Schottky Structure Behaviour
Stéphane Biondo
,
Mihai Lazar
,
Laurent Ottaviani
,
Wilfried Vervisch
,
Olivier Palais
,
et al.
Journal articles
hal-04050522v1
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Optical and Electrical Simulation of 4H-SiC UV Photodetector by Finite Element Method
Stéphane Biondo
,
Wilfried Vervisch
,
Laurent Ottaviani
,
Olivier Palais
Journal articles
hal-03350223v1
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4H-silicon carbide thin junction based ultraviolet photodetectors
Stéphane Biondo
,
Mihai Lazar
,
Laurent Ottaviani
,
Wilfried Vervisch
,
Vincent Le Borgne
,
et al.
Journal articles
istex
hal-00747356v1
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4H-SiC P+N UV Photodiodes for Space Applications
B. Berenguier
,
Laurent Ottaviani
,
Stéphane Biondo
,
Mihai Lazar
,
Frédéric Milesi
,
et al.
Journal articles
hal-01391847v1
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Influence on electrical characteristics of the design of 4H-SiC ultraviolet photodetectors: Theoretical analysis and simulations
Stéphane Biondo
,
Wilfried Vervisch
,
Laurent Ottaviani
,
Olivier Palais
Journal articles
hal-03350206v1
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Influence of P+ layer parameters on 4H-SiC UV PiN photodetector characteristics
Laurent Ottaviani
,
Stéphane Biondo
,
Mihai Lazar
,
Wilfried Vervisch
,
Julian Duchaine
,
et al.
WOCSDICE, May 2011, Catania, Italy. pp.181
Conference papers
hal-00661522v1
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