Comments on The generation and Characterization of electron and Hole traps created by Hole injection during Low Gate voltage Hot-Carrier Stressing in n-MOS Transistors
B.S. Doyle
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M. Bourcerie
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IEEE Transactions on Electron Devices , 1992, IEEE Transaction on Electron devices, 39 (2),
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hal-03022929v1
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Charging and discharging properties of electron traps created by hot-carrier injections in gate oxide of n-channel metal oxide semiconductor field effect transistor
Dominique Vuillaume
,
Alain Bravaix
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hal-03022904v1
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Lifetime prediction methods for p-MOSFET's: a comparative study of standard and charge-pumping lifetime criteria
Alain Bravaix
,
Dominique Vuillaume
IEEE Transactions on Electron Devices , 1995, IEEE Transaction on Electron devices, 42 (1)
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hal-03022912v1
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From defects creation to circuit reliability – A bottom-up approach (invited)
V. Huard
,
F. Cacho
,
Y. Mamy Randriamihaja
,
Alain Bravaix
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hal-03655097v1
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Reliability compact modeling approach for layout dependent effects in advanced CMOS nodes
C. Ndiaye
,
R. Berthelon
,
V. Huard
,
Alain Bravaix
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C. Diouf
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et al.
2017 IEEE International Reliability Physics Symposium (IRPS) , Apr 2017, Monterey, France. pp.4C-4.1-4C-4.7,
⟨10.1109/IRPS.2017.7936315⟩
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hal-03654474v1
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Impact of wafer charging on hot carrier reliability and optimization of latent damage detection methodology in advanced CMOS technologies
D. Goguenheim
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Alain Bravaix
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S. Gomri
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J.M. Moragues
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C. Monserie
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et al.
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hal-03661139v1
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Comparison of degradation modes in 1.2–2.1 nm thick SiO2 oxides submitted to uniform and hot carrier injections in NMOSFETS
Didier Goguenheim
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Céline Trapes
,
Alain Bravaix
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hal-03667837v1
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Robust automotive products in advanced CMOS nodes
Alain Bravaix
,
V. Huard
,
S. Mhira
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M. de Tomasi
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E. Trabace
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et al.
2017 IEEE International Reliability Physics Symposium (IRPS) , Apr 2017, Monterey, France. pp.3A-2.1-3A-2.7,
⟨10.1109/IRPS.2017.7936277⟩
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hal-03654298v1
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Reliability and Physics-of-Healthy in Mechatronics Volume 15 – Reliability of Multiphysical Systems Chapter II: Applied Engineering on Physics-of-Healthy and SHM of microelectronic equipment for aeronautic, space, automotive and transport operations. pp.06-53
Alain Bensoussan
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Joseph Bernstein
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Alain Bravaix
ISTE Knowledge.
Reliability and Physics-of-Healthy in Mechatronics , 15,
WILEY , pp.6-53, 2022, Reliability of Multiphysical Systems Set, 978-1-786-30881-8
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hal-04125717v1
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Analysis of high temperature effects on performances and hot-carrier degradation in DC/AC stressed 0.35 μm n-MOSFETs
Alain Bravaix
,
D. Goguenheim
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N. Revil
,
E. Vincent
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M. Varrot
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et al.
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hal-03689806v1
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HOT-CARRIER RELIABILITY IN n-MOSFETs USED AS PASS-TRANSISTORS
D Goguenheim
,
Alain Bravaix
,
Dominique Vuillaume
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M Varrot
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N Revil
,
et al.
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hal-03689839v1
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Performance vs. Reliability Adaptive Body Bias Scheme in 28nm & 14nm UTBB FDSOI nodes
Cheikh M. Ndiaye
,
Vincent Huard
,
Xavier Federspiel
,
Alain Bravaix
Microelectronics Reliability , 2016, 64, pp.158-162
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hal-01977447v1
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Hot-carrier injections in SiO2
Dominique Vuillaume
,
Alain Bravaix
,
D Goguenheim
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istex
hal-03674471v1
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New Insights Into Recovery Characteristics During PMOS NBTI and CHC Degradation
Chittoor Parthasarathy
,
M. Denais
,
Vincent Huard
,
Guillaume Ribes
,
Emmanuel Vincent
,
et al.
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hal-03655564v1
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Interface Trap Generation and Hole Trapping Under NBTI and PBTI in Advanced CMOS Technology With a 2-nm Gate Oxide
M. Denais
,
V. Huard
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C. Parthasarathy
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G. Ribes
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F. Perrier
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et al.
IEEE Transactions on Device and Materials Reliability , 2004, IEEE Transactions on Device and Materials Reliability, 4 (4), pp.715-722.
⟨10.1109/TDMR.2004.840856⟩
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hal-03661158v1
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Process Optimization for HCI Improvement in I/O Analog Devices
C. Diouf
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N. Guitard
,
M. Rafik
,
J. Martinez
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X. Federspiel
,
et al.
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hal-03654186v1
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Experimental study of the quasi-breakdown failure mechanism in 4.5 nm-thick SiO2 oxides
D. Goguenheim
,
Alain Bravaix
,
Dominique Vuillaume
,
F. Mondon
,
Ph. Candelier
,
et al.
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hal-03689782v1
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Hot-carrier damage from high to low voltage using the energy-driven framework
C. Guerin
,
V. Huard
,
Alain Bravaix
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hal-03661029v1
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Experimental extraction of degradation parameters after constant voltage stress and substrate hot electron injection on ultrathin oxides
C. Trapes
,
D. Goguenheim
,
Alain Bravaix
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hal-03661125v1
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Designing in reliability in advanced CMOS technologies
C.R. Parthasarathy
,
M. Denais
,
V. Huard
,
G. Ribes
,
D. Roy
,
et al.
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hal-03661042v1
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Stress induced leakage currents in N-MOSFETs submitted to channel hot carrier injections
D Goguenheim
,
Alain Bravaix
,
Dominique Vuillaume
,
F Mondon
,
M Jourdain
,
et al.
Journal articles
hal-03674356v1
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Temperature and field dependence of stress induced leakage currents in very thin (<5 nm) gate oxides
Didier Goguenheim
,
Alain Bravaix
,
Bouchra Ananou
,
Céline Trapes
,
Francois Mondon
,
et al.
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hal-03674263v1
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Design-in-Reliability Approach for NBTI and Hot-Carrier Degradations in Advanced Nodes
Vincent Huard
,
C. Parthasarathy
,
Alain Bravaix
,
T. Hugel
,
Chloé Guerin
,
et al.
IEEE Transactions on Device and Materials Reliability , 2007, IEEE Transactions on Device and Materials Reliability, 7 (4), pp.558-570.
⟨10.1109/TDMR.2007.911380⟩
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hal-03655555v1
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Damage Induced by Carrier Injections in 8 nm Thick Oxides and Nitrided Gate-Oxides
Alain Bravaix
,
Dominique Vuillaume
,
Valérie Thirion
,
Didier Dorval
,
Alain Straboni
Journal articles
istex
hal-03022963v1
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New Modelling Off-state TDDB for 130nm to 28nm CMOS nodes
Tidjani Garba-Seybou
,
Xavier Federspiel
,
Alain Bravaix
,
Florian Cacho
Conference papers
hal-03659269v1
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Modeling hot carrier damage interaction between on and off modes for 28 nm AC RF applications
T. Garba-Seybou
,
Alain Bravaix
,
X. Federspiel
,
F. Cacho
Journal articles
hal-03654120v1
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Reliability compact modeling approach for layout dependent effects in advanced CMOS nodes
C. Ndiaye
,
Alain Bravaix
,
C. Diouf
,
F. Andrieu
,
S. Ortolland
,
et al.
2017 IEEE International Reliability Physics Symposium (IRPS) , Apr 2017, Monterey, France. pp.4C-4.1-4C-4.7,
⟨10.1109/IRPS.2017.7936315⟩
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hal-03654455v1
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Architecture- and workload-dependent digital failure rate
Ajith Sivadasan
,
S. Mhira
,
Armelle Notin
,
A. Benhassain
,
V. Huard
,
et al.
2017 IEEE International Reliability Physics Symposium (IRPS) , Apr 2017, Monterey, France. pp.CR-8.1-CR-8.4,
⟨10.1109/IRPS.2017.7936357⟩
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hal-03654383v1
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Impacts of the recovery phenomena on the worst-case of damage in DC/AC stressed ultra-thin NO gate-oxide MOSFETs
Alain Bravaix
,
D. Goguenheim
,
M. Denais
,
V. Huard
,
C. Parthasarathy
,
et al.
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hal-03661088v1
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A thorough investigation of MOSFETs NBTI degradation
V. Huard
,
M. Denais
,
F. Perrier
,
N. Revil
,
C. Parthasarathy
,
et al.
Journal articles
hal-03661108v1
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