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Comments on The generation and Characterization of electron and Hole traps created by Hole injection during Low Gate voltage Hot-Carrier Stressing in n-MOS Transistors

B.S. Doyle , K.R. Mistry , M. Bourcerie , C. Bergonzoni , R. Benecchi , et al.
IEEE Transactions on Electron Devices, 1992, IEEE Transaction on Electron devices, 39 (2), ⟨10.1109/16.121710⟩
Journal articles hal-03022929v1

Charging and discharging properties of electron traps created by hot-carrier injections in gate oxide of n-channel metal oxide semiconductor field effect transistor

Dominique Vuillaume , Alain Bravaix
Journal of Applied Physics, 1993, Journal of Applied Physics, 73 (5), ⟨10.1063/1.353065⟩
Journal articles hal-03022904v1

Lifetime prediction methods for p-MOSFET's: a comparative study of standard and charge-pumping lifetime criteria

Alain Bravaix , Dominique Vuillaume
IEEE Transactions on Electron Devices, 1995, IEEE Transaction on Electron devices, 42 (1)
Journal articles hal-03022912v1

From defects creation to circuit reliability – A bottom-up approach (invited)

V. Huard , F. Cacho , Y. Mamy Randriamihaja , Alain Bravaix
Microelectronic Engineering, 2011, 88 (7), pp.1396-1407. ⟨10.1016/j.mee.2011.03.101⟩
Journal articles hal-03655097v1

Reliability compact modeling approach for layout dependent effects in advanced CMOS nodes

C. Ndiaye , R. Berthelon , V. Huard , Alain Bravaix , C. Diouf , et al.
2017 IEEE International Reliability Physics Symposium (IRPS), Apr 2017, Monterey, France. pp.4C-4.1-4C-4.7, ⟨10.1109/IRPS.2017.7936315⟩
Conference papers hal-03654474v1

Impact of wafer charging on hot carrier reliability and optimization of latent damage detection methodology in advanced CMOS technologies

D. Goguenheim , Alain Bravaix , S. Gomri , J.M. Moragues , C. Monserie , et al.
Microelectronics Reliability, 2005, Microelectronics Reliability, 45 (3-4), pp.487-492. ⟨10.1016/j.microrel.2004.09.004⟩
Journal articles hal-03661139v1

Comparison of degradation modes in 1.2–2.1 nm thick SiO2 oxides submitted to uniform and hot carrier injections in NMOSFETS

Didier Goguenheim , Céline Trapes , Alain Bravaix
Journal of Non-Crystalline Solids, 2003, Journal of Non-Crystalline Solids, 322 (1-3), pp.183-190. ⟨10.1016/S0022-3093(03)00200-X⟩
Journal articles hal-03667837v1

Robust automotive products in advanced CMOS nodes

Alain Bravaix , V. Huard , S. Mhira , M. de Tomasi , E. Trabace , et al.
2017 IEEE International Reliability Physics Symposium (IRPS), Apr 2017, Monterey, France. pp.3A-2.1-3A-2.7, ⟨10.1109/IRPS.2017.7936277⟩
Conference papers hal-03654298v1
Image document

Reliability and Physics-of-Healthy in Mechatronics Volume 15 – Reliability of Multiphysical Systems Chapter II: Applied Engineering on Physics-of-Healthy and SHM of microelectronic equipment for aeronautic, space, automotive and transport operations. pp.06-53

Alain Bensoussan , Joseph Bernstein , Alain Bravaix
ISTE Knowledge. Reliability and Physics-of-Healthy in Mechatronics, 15, WILEY, pp.6-53, 2022, Reliability of Multiphysical Systems Set, 978-1-786-30881-8
Book sections hal-04125717v1

Analysis of high temperature effects on performances and hot-carrier degradation in DC/AC stressed 0.35 μm n-MOSFETs

Alain Bravaix , D. Goguenheim , N. Revil , E. Vincent , M. Varrot , et al.
Microelectronics Reliability, 1999, Microelectronics Reliability, 39 (1), pp.35-44. ⟨10.1016/S0026-2714(98)00166-8⟩
Journal articles hal-03689806v1

HOT-CARRIER RELIABILITY IN n-MOSFETs USED AS PASS-TRANSISTORS

D Goguenheim , Alain Bravaix , Dominique Vuillaume , M Varrot , N Revil , et al.
Microelectronics Reliability, 1998, 38 (4), pp.539-544. ⟨10.1016/S0026-2714(97)00217-5⟩
Journal articles hal-03689839v1

Performance vs. Reliability Adaptive Body Bias Scheme in 28nm & 14nm UTBB FDSOI nodes

Cheikh M. Ndiaye , Vincent Huard , Xavier Federspiel , Alain Bravaix
Microelectronics Reliability, 2016, 64, pp.158-162
Journal articles hal-01977447v1

Hot-carrier injections in SiO2

Dominique Vuillaume , Alain Bravaix , D Goguenheim
Microelectronics Reliability, 1998, Microelectronics Reliability, 38 (1), pp.7-22. ⟨10.1016/S0026-2714(97)00179-0⟩
Journal articles istex hal-03674471v1

New Insights Into Recovery Characteristics During PMOS NBTI and CHC Degradation

Chittoor Parthasarathy , M. Denais , Vincent Huard , Guillaume Ribes , Emmanuel Vincent , et al.
IEEE Transactions on Device and Materials Reliability, 2007, 7 (1), pp.130-137. ⟨10.1109/TDMR.2007.898085⟩
Journal articles hal-03655564v1

Interface Trap Generation and Hole Trapping Under NBTI and PBTI in Advanced CMOS Technology With a 2-nm Gate Oxide

M. Denais , V. Huard , C. Parthasarathy , G. Ribes , F. Perrier , et al.
IEEE Transactions on Device and Materials Reliability, 2004, IEEE Transactions on Device and Materials Reliability, 4 (4), pp.715-722. ⟨10.1109/TDMR.2004.840856⟩
Journal articles hal-03661158v1

Process Optimization for HCI Improvement in I/O Analog Devices

C. Diouf , N. Guitard , M. Rafik , J. Martinez , X. Federspiel , et al.
2019 IEEE International Reliability Physics Symposium (IRPS), Mar 2019, Monterey, France. pp.1-6, ⟨10.1109/IRPS.2019.8720544⟩
Conference papers hal-03654186v1

Experimental study of the quasi-breakdown failure mechanism in 4.5 nm-thick SiO2 oxides

D. Goguenheim , Alain Bravaix , Dominique Vuillaume , F. Mondon , Ph. Candelier , et al.
Microelectronics Reliability, 1999, Microelectronics Reliability, 39 (2), pp.165-169. ⟨10.1016/S0026-2714(98)00215-7⟩
Journal articles hal-03689782v1

Hot-carrier damage from high to low voltage using the energy-driven framework

C. Guerin , V. Huard , Alain Bravaix
Microelectronic Engineering, 2007, 84 (9-10), pp.1938-1942. ⟨10.1016/j.mee.2007.04.104⟩
Journal articles hal-03661029v1

Experimental extraction of degradation parameters after constant voltage stress and substrate hot electron injection on ultrathin oxides

C. Trapes , D. Goguenheim , Alain Bravaix
Microelectronics Reliability, 2005, Microelectronics Reliability, 45 (5-6), pp.883-886. ⟨10.1016/j.microrel.2004.10.025⟩
Journal articles hal-03661125v1

Designing in reliability in advanced CMOS technologies

C.R. Parthasarathy , M. Denais , V. Huard , G. Ribes , D. Roy , et al.
Microelectronics Reliability, 2006, Microelectronics Reliability, 46 (9-11), pp.1464-1471. ⟨10.1016/j.microrel.2006.07.012⟩
Journal articles hal-03661042v1

Stress induced leakage currents in N-MOSFETs submitted to channel hot carrier injections

D Goguenheim , Alain Bravaix , Dominique Vuillaume , F Mondon , M Jourdain , et al.
Journal of Non-Crystalline Solids, 1999, 245 (1-3), pp.41-47. ⟨10.1016/S0022-3093(98)00852-7⟩
Journal articles hal-03674356v1

Temperature and field dependence of stress induced leakage currents in very thin (<5 nm) gate oxides

Didier Goguenheim , Alain Bravaix , Bouchra Ananou , Céline Trapes , Francois Mondon , et al.
Journal of Non-Crystalline Solids, 2001, 280 (1-3), pp.78-85. ⟨10.1016/S0022-3093(00)00357-4⟩
Journal articles hal-03674263v1

Design-in-Reliability Approach for NBTI and Hot-Carrier Degradations in Advanced Nodes

Vincent Huard , C. Parthasarathy , Alain Bravaix , T. Hugel , Chloé Guerin , et al.
IEEE Transactions on Device and Materials Reliability, 2007, IEEE Transactions on Device and Materials Reliability, 7 (4), pp.558-570. ⟨10.1109/TDMR.2007.911380⟩
Journal articles hal-03655555v1

Damage Induced by Carrier Injections in 8 nm Thick Oxides and Nitrided Gate-Oxides

Alain Bravaix , Dominique Vuillaume , Valérie Thirion , Didier Dorval , Alain Straboni
Journal of Non-Crystalline Solids, 1995, Journal of Non-Crystalline Solids, 187 (1), ⟨10.1016/0022-3093(95)00165-4⟩
Journal articles istex hal-03022963v1
Image document

New Modelling Off-state TDDB for 130nm to 28nm CMOS nodes

Tidjani Garba-Seybou , Xavier Federspiel , Alain Bravaix , Florian Cacho
2022 IEEE International Reliability Physics Symposium (IRPS), Mar 2022, Dallas, United States. pp.11A.3-1-11A.3-7, ⟨10.1109/IRPS48227.2022.9764431⟩
Conference papers hal-03659269v1

Modeling hot carrier damage interaction between on and off modes for 28 nm AC RF applications

T. Garba-Seybou , Alain Bravaix , X. Federspiel , F. Cacho
Microelectronics Reliability, 2021, Microelectronics Reliability, 126, pp.114342. ⟨10.1016/j.microrel.2021.114342⟩
Journal articles hal-03654120v1

Reliability compact modeling approach for layout dependent effects in advanced CMOS nodes

C. Ndiaye , Alain Bravaix , C. Diouf , F. Andrieu , S. Ortolland , et al.
2017 IEEE International Reliability Physics Symposium (IRPS), Apr 2017, Monterey, France. pp.4C-4.1-4C-4.7, ⟨10.1109/IRPS.2017.7936315⟩
Conference papers hal-03654455v1

Architecture- and workload-dependent digital failure rate

Ajith Sivadasan , S. Mhira , Armelle Notin , A. Benhassain , V. Huard , et al.
2017 IEEE International Reliability Physics Symposium (IRPS), Apr 2017, Monterey, France. pp.CR-8.1-CR-8.4, ⟨10.1109/IRPS.2017.7936357⟩
Conference papers hal-03654383v1

Impacts of the recovery phenomena on the worst-case of damage in DC/AC stressed ultra-thin NO gate-oxide MOSFETs

Alain Bravaix , D. Goguenheim , M. Denais , V. Huard , C. Parthasarathy , et al.
Microelectronics Reliability, 2005, 45 (9-11), pp.1370-1375. ⟨10.1016/j.microrel.2005.07.023⟩
Journal articles hal-03661088v1

A thorough investigation of MOSFETs NBTI degradation

V. Huard , M. Denais , F. Perrier , N. Revil , C. Parthasarathy , et al.
Microelectronics Reliability, 2005, 45 (1), pp.83-98. ⟨10.1016/j.microrel.2004.04.027⟩
Journal articles hal-03661108v1