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Journal Articles Materials Science Forum Year : 2016

Lifetime Measurement in Silicon Carbide by Mean of the Microwave Phase-Shift

Abstract

During the past years, our team developed an original lifetime measurement method for semiconductors wafers, called microwave phase-shift (µW-PS). It was successfully employed to determinate bulk lifetime and surface recombination velocities on silicon. We recently adapted the method to silicon carbide (SiC), using a continuous UV laser and acousto-optic modulator. The theory is presented, using the standard continuity equation in n-type 4H-SiC. The proposed measurement setup firstly allows to estimate a bulk lifetime ranging from 2.3 to 6.7 µs.
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Dates and versions

hal-01452642 , version 1 (02-02-2017)

Identifiers

  • HAL Id : hal-01452642 , version 1

Cite

B. Berenguier, Olivier Palais, Sylvain Bertaina, L. Ottaviani, A. Lyoussi. Lifetime Measurement in Silicon Carbide by Mean of the Microwave Phase-Shift. Materials Science Forum, 2016, 858, pp.337-340. ⟨hal-01452642⟩
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