Ge condensation for the fabrication of fully strained and defect-free planar Si0.5Ge0.5 layers on silicon - Aix-Marseille Université Access content directly
Conference Papers Year : 2016
No file

Dates and versions

hal-01454802 , version 1 (03-02-2017)

Identifiers

  • HAL Id : hal-01454802 , version 1

Cite

T. David, K. Liu, Luc Favre, A. Ronda, Marco Abbarchi, et al.. Ge condensation for the fabrication of fully strained and defect-free planar Si0.5Ge0.5 layers on silicon. International Conference on Nanostructures and nanomaterials self-assembly (NanoSEA), Jul 2016, Griadini Naxos, Italy. ⟨hal-01454802⟩
83 View
0 Download

Share

Gmail Facebook X LinkedIn More