Detection and mapping of oxygen in silicon wafers by scanning infrared absorption - Aix-Marseille Université
Article Dans Une Revue International Journal of Infrared and Millimeter Waves Année : 1997

Detection and mapping of oxygen in silicon wafers by scanning infrared absorption

Dates et versions

hal-01757688 , version 1 (03-04-2018)

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Philippe Torchio, Roland Occelli. Detection and mapping of oxygen in silicon wafers by scanning infrared absorption. International Journal of Infrared and Millimeter Waves, 1997, 18 (2), pp.491 - 499. ⟨10.1007/BF02677935⟩. ⟨hal-01757688⟩
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