Single-Event-Transient Effects in Junctionless Double-Gate MOSFETs with Dual-Material Gate Investigated by 3D Simulation - Aix-Marseille Université Access content directly
Conference Papers Year : 2017

Single-Event-Transient Effects in Junctionless Double-Gate MOSFETs with Dual-Material Gate Investigated by 3D Simulation

Abstract

The Junctionless Double-Gate MOSFET combined with a Dual-Material Gate (JL-DMDG) is interesting for future ultra-scaled devices thanks to a simplified technological process (no junctions), reduced leakage currents and capability to reduce SCEs and HCEs (due to the step in the potential profile). In this work, we investigate the bipolar amplification and charge collection in JL-DMDG submitted to heavy-ion irradiation. We show that JL-DMDG is more sensitive to radiation than more conventional devices with single-material-gate or operating in inversion-mode.
Fichier principal
Vignette du fichier
ESREF2017_Munteanu.pdf (527.01 Ko) Télécharger le fichier
Origin : Files produced by the author(s)
Loading...

Dates and versions

hal-01787612 , version 1 (07-05-2018)

Identifiers

  • HAL Id : hal-01787612 , version 1

Cite

Daniela Munteanu, Jean-Luc Autran, Soilihi Moindjie. Single-Event-Transient Effects in Junctionless Double-Gate MOSFETs with Dual-Material Gate Investigated by 3D Simulation. 28th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2017), Sep 2017, Bordeaux, France. ⟨hal-01787612⟩
71 View
118 Download

Share

Gmail Facebook X LinkedIn More