High resolution electron energy loss spectroscopy of GaAs and AlAs grown by molecular beam epitaxy - Aix-Marseille Université Access content directly
Journal Articles Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces Year : 1991

High resolution electron energy loss spectroscopy of GaAs and AlAs grown by molecular beam epitaxy

J.L. Guyaux
  • Function : Author
A. Thiry
  • Function : Author
R. Caudano
  • Function : Author
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hal-01963935 , version 1 (21-12-2018)

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  • HAL Id : hal-01963935 , version 1

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Alain Jean Degiovanni, J.L. Guyaux, A. Thiry, R. Caudano. High resolution electron energy loss spectroscopy of GaAs and AlAs grown by molecular beam epitaxy. Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 1991, 251-252, pp.238-242. ⟨hal-01963935⟩
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