Structured Roughness of Si Surface Obtained by Molecular Beam Epitaxy on Highly Misoriented Si(111) Substrate - Aix-Marseille Université Accéder directement au contenu
Article Dans Une Revue Surface Review and Letters Année : 1998

Structured Roughness of Si Surface Obtained by Molecular Beam Epitaxy on Highly Misoriented Si(111) Substrate

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hal-01964075 , version 1 (21-12-2018)

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  • HAL Id : hal-01964075 , version 1

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J.-M. Gay, L. Lapena, M. Ladevèze, M. Tolan. Structured Roughness of Si Surface Obtained by Molecular Beam Epitaxy on Highly Misoriented Si(111) Substrate. Surface Review and Letters, 1998, 05 (01), pp.31-36. ⟨hal-01964075⟩
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