Phase formation during Mn thin film reaction with Ge: Self-aligned germanide process for spintronics - Aix-Marseille Université Access content directly
Journal Articles Applied Physics Letters Year : 2013
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hal-02044881 , version 1 (21-02-2019)

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  • HAL Id : hal-02044881 , version 1

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Omar Abbes, A. Portavoce, V. Le Thanh, Christophe Girardeaux, L. Michez. Phase formation during Mn thin film reaction with Ge: Self-aligned germanide process for spintronics. Applied Physics Letters, 2013, 103 (17), pp.172405. ⟨hal-02044881⟩
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