Kinetics of tin segregation on crystalline semiconductor surfaces: effect of the defects induced by ion bombardment - Aix-Marseille Université Access content directly
Journal Articles Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces Year : 2004
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hal-02045019 , version 1 (21-02-2019)

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  • HAL Id : hal-02045019 , version 1

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A. Rolland, J. Bernardini, G. Moya, Christophe Girardeaux. Kinetics of tin segregation on crystalline semiconductor surfaces: effect of the defects induced by ion bombardment. Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 2004, 566-568, pp.1163-1167. ⟨hal-02045019⟩
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