AES study of surface segregation of Ge in amorphous Si1−xGex thin film alloys - Aix-Marseille Université Access content directly
Journal Articles Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces Year : 2001

AES study of surface segregation of Ge in amorphous Si1−xGex thin film alloys

J Nyéki
  • Function : Author
Christophe Girardeaux
Z Erdélyi
  • Function : Author
G.A Langer
  • Function : Author
G Erdélyi
  • Function : Author
D.L Beke
  • Function : Author
A Rolland
  • Function : Author
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Dates and versions

hal-02045037 , version 1 (21-02-2019)

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  • HAL Id : hal-02045037 , version 1

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J Nyéki, Christophe Girardeaux, Z Erdélyi, G.A Langer, G Erdélyi, et al.. AES study of surface segregation of Ge in amorphous Si1−xGex thin film alloys. Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 2001, 495 (3), pp.195-203. ⟨hal-02045037⟩

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