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https://amu.hal.science/hal-02111112
Submitted on : Thursday, April 25, 2019-5:52:49 PM
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- HAL Id : hal-02111112 , version 1
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V. Huard, C. Ndiaye, M. Arabi, N. Parihar, X. Federspiel, et al.. Key Parameters Driving Transistor Degradation in Advanced Strained SiGe Channels. IEEE International Reliability Physics Symposium, (IRPS), Mar 2018, Burlingame, California, United States. ⟨hal-02111112⟩
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