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Key Parameters Driving Transistor Degradation in Advanced Strained SiGe Channels

V. Huard
  • Function : Author
C. Ndiaye
  • Function : Author
M. Arabi
  • Function : Author
N. Parihar
  • Function : Author
X. Federspiel
  • Function : Author
S. Mhira
  • Function : Author
S. Mahapatra
  • Function : Author
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Dates and versions

hal-02111112 , version 1 (25-04-2019)

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  • HAL Id : hal-02111112 , version 1

Cite

V. Huard, C. Ndiaye, M. Arabi, N. Parihar, X. Federspiel, et al.. Key Parameters Driving Transistor Degradation in Advanced Strained SiGe Channels. IEEE International Reliability Physics Symposium, (IRPS), Mar 2018, Burlingame, California, United States. ⟨hal-02111112⟩
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