Investigation of Sensitivity to Heavy-Ion Irradiation of Junctionless Double-Gate MOSFETs by 3-D Numerical Simulation - Aix-Marseille Université Access content directly
Book Sections Year : 2014

Investigation of Sensitivity to Heavy-Ion Irradiation of Junctionless Double-Gate MOSFETs by 3-D Numerical Simulation

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hal-02119405 , version 1 (03-05-2019)

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Daniela Munteanu, Jean-Luc Autran. Investigation of Sensitivity to Heavy-Ion Irradiation of Junctionless Double-Gate MOSFETs by 3-D Numerical Simulation. J. Awrejcewicz. Computational and Numerical Simulations, INTECH, 2014, ⟨10.5772/57048⟩. ⟨hal-02119405⟩
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