Numerical Simulation of Transient Response in 3-D Multi-Channel Nanowire MOSFETs Submitted to Heavy Ion Irradiation - Aix-Marseille Université Accéder directement au contenu
Chapitre D'ouvrage Année : 2011

Numerical Simulation of Transient Response in 3-D Multi-Channel Nanowire MOSFETs Submitted to Heavy Ion Irradiation

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hal-02121221 , version 1 (06-05-2019)

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Daniela Munteanu, Jean-Luc Autran, Sebastien Martinie. Numerical Simulation of Transient Response in 3-D Multi-Channel Nanowire MOSFETs Submitted to Heavy Ion Irradiation. A. Hashim. Nanowires - Implementations and Applications, INTECH, pp.201-222, 2011, 978-953-307-563-1. ⟨10.5772/16827⟩. ⟨hal-02121221⟩
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