Electrical characterization, modeling and simulation of high-κ based MOS devices - Aix-Marseille Université Access content directly
Book Sections Year : 2004
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hal-02121367 , version 1 (06-05-2019)

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  • HAL Id : hal-02121367 , version 1

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Jean-Luc Autran, Daniela Munteanu, Michel Houssa. Electrical characterization, modeling and simulation of high-κ based MOS devices. M. Houssa. Fundamental and Technological Aspects of High-κ Gate Dielectrics, IOP Publishing, pp.251-289, 2004. ⟨hal-02121367⟩
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