Influence of band structure on electron ballistic transport in silicon nanowire MOSFET’s: An atomistic study - Aix-Marseille Université Access content directly
Journal Articles Solid-State Electronics Year : 2006

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hal-02132134 , version 1 (16-05-2019)

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K. Nehari, N. Cavassilas, Jean-Luc Autran, M. Bescond, Daniela Munteanu, et al.. Influence of band structure on electron ballistic transport in silicon nanowire MOSFET’s: An atomistic study. Solid-State Electronics, 2006, 50 (4), pp.716-721. ⟨10.1016/j.sse.2006.03.041⟩. ⟨hal-02132134⟩
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