Journal Articles
IEEE Electron Device Letters
Year : 2001
Daniela Munteanu : Connect in order to contact the contributor
https://amu.hal.science/hal-02132540
Submitted on : Friday, May 17, 2019-11:33:47 AM
Last modification on : Friday, March 24, 2023-2:53:11 PM
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A.M. Ionescu, Daniela Munteanu. A novel in-situ SOI characterization technique: the intrinsic point-probe MOSFET. IEEE Electron Device Letters, 2001, 22 (4), pp.166-169. ⟨10.1109/55.915601⟩. ⟨hal-02132540⟩
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