A novel in-situ SOI characterization technique: the intrinsic point-probe MOSFET - Aix-Marseille Université Access content directly
Journal Articles IEEE Electron Device Letters Year : 2001

A novel in-situ SOI characterization technique: the intrinsic point-probe MOSFET

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hal-02132540 , version 1 (17-05-2019)

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A.M. Ionescu, Daniela Munteanu. A novel in-situ SOI characterization technique: the intrinsic point-probe MOSFET. IEEE Electron Device Letters, 2001, 22 (4), pp.166-169. ⟨10.1109/55.915601⟩. ⟨hal-02132540⟩

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