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Conference Papers Year : 2019

Atmospheric Neutron Radiation Response of III-V Binary Compound Semiconductors

Abstract

This works examines the radiation response of III-V binary compound semiconductors subjected to high energy atmospheric neutrons. Production of neutron-induced secondary products and implications for single event effects are carefully analyzed and discussed. Index Terms-atmospheric neutrons, binary compound semiconductors, III-V materials, neutron cross section, elastic scattering, noneleastic interactions, nuclear data library, Geant4, numerical simulation.
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Dates and versions

hal-02263545 , version 1 (10-11-2020)

Identifiers

  • HAL Id : hal-02263545 , version 1

Cite

Jean-Luc Autran, Daniela Munteanu. Atmospheric Neutron Radiation Response of III-V Binary Compound Semiconductors. European Workshop on Radiation and its Effects on Components and Systems (RADECS 2019), Sep 2019, Biarritz, France. ⟨hal-02263545⟩
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